Abstract

We investigate the transmission of InGaAsP epilayers lattice matched to InP substrates under optical excitation at normal incidence to the surface. Near the gap wavelength (λ = 1.3 μm) we observe a transmission change of 20% for a 0.5-mW pump beam at a wavelength λ2 = 790 nm. Switching dynamics are shown to be limited by carrier lifetimes of τ ≈ 2 nsec. A simple analysis based on parabolic bands and direct electronic transitions provides a good description of the experiments.

© 1987 Optical Society of America

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