Abstract

Room-temperature continuous-wave operation of large-area (120 μm × 980 μm) GaAs/AlGaAs graded-refractive-index separate-confinement heterostructure lasers on (100) Si substrates has been obtained. Minimum threshold-current densities of 214 A/cm2 (1900-μm cavity length), maximum slope efficiencies of about 0.8 W/A (600-μm cavity length),and optical power in excess of 270 mW/facet (900-μm cavity length) have been observed under pulsed conditions.

© 1987 Optical Society of America

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