Abstract

The design, fabrication, and characterization of an electrically injected quantum-dot photonic crystal microcavity light source are described. The optical gain in the $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$-based device is provided by self-organized InGaAs quantum dots with ground-state room-temperature emission at $1.1\mu \mathrm{m}$. The carriers are injected directly into the photonic crystal microcavity, which contains $\sim 50$ dots, avoiding surface state recombination in the photonic crystal pattern. The spectral characteristics of a single-defect photonic crystal microcavity show a single $2\mathrm{nm}$ broad microcavity resonance. The output power is of the order of a few tens of nanowatts.

© 2006 Optical Society of America

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