Abstract

The responsivity of a type 6H–SiC photodiode in the 1.5400nm wavelength range was measured using synchrotron radiation. The responsivity was 0.20AW at 270nm and was less than 0.10AW in the extreme ultraviolet (EUV) region. The responsivity was calculated using a proven optical model that accounted for the reflection and absorption of the incident radiation and the variation of the charge collection efficiency (CCE) with depth into the device. The CCE was determined from the responsivity measured in the 200400nm wavelength range. By use of this CCE and the effective pair creation energy (7.2eV) determined from x-ray absorption measurements, the EUV responsivity was accurately modeled with no free parameters. The measured visible-light sensitivity, although low compared with that of a silicon photodiode, was surprisingly high for this wide bandgap semiconductor.

© 2005 Optical Society of America

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