Abstract

We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 μm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi₁₂SiO₂₀. The response time is measured to be 20 μsec at an intensity of 4 W/cm². This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.

© 1984 Optical Society of America

Picosecond photorefractive beam coupling in GaAs

George C. Valley, Arthur L. Smirl, M. B. Klein, K. Bohnert, and Thomas F. Boggess
Opt. Lett. 11(10) 647-649 (1986)

Investigation of the photorefractive behavior of chrome-doped GaAs by using two-beam coupling

Giovanni Albanese, Jayant Kumar, and William H. Steier
Opt. Lett. 11(10) 650-652 (1986)

High-accuracy, high-reflectivity phase conjugation at 1.06 μm by four-wave mixing in photorefractive gallium arsenide

M. B. Klein, S. W. McCahon, T. F. Boggess, and G. C. Valley
J. Opt. Soc. Am. B 5(12) 2467-2472 (1988)

Amplified phase-conjugate beam reflection by four-wave mixing with photorefractive Bi₁₂SiO₂₀ crystals

H. Rajbenbach, J. P. Huignard, and Ph. Refrégier
Opt. Lett. 9(12) 558-560 (1984)

Two-wave mixing with an applied field and a moving grating

George C. Valley
J. Opt. Soc. Am. B 1(6) 868-873 (1984)