Add to BibSonomy
Abstract
Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of ${\rm{LiNb}}{{\rm{O}}_3}$, but also avoids the direct etching of ${\rm{LiNb}}{{\rm{O}}_3}$ thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ${\sim}{{20}}\;{\rm{dB}}$. Moreover, the 3 dB EO bandwidth is ${\sim}{{30}}\;{\rm{GHz}}$, while the modulated data rate for on–off key signals can reach up to 80 Gbps.
© 2021 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Abu Naim R. Ahmed, Sean Nelan, Shouyuan Shi, Peng Yao, Andrew Mercante, and Dennis W. Prather
Opt. Lett. 45(5) 1112-1115 (2020)
Yang Liu, Xingrui Huang, Zezheng Li, Huan Guan, Zhiguo Yu, Qingquan Wei, Zhongchao Fan, Weihua Han, and Zhiyong Li
Opt. Lett. 46(13) 3179-3182 (2021)
Xingrui Huang, Yang Liu, Zezheng Li, Huan Guan, Qingquan Wei, Manqing Tan, and Zhiyong Li
Opt. Lett. 46(12) 2811-2814 (2021)