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Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

Lin Chang, Martin H. P. Pfeiffer, Nicolas Volet, Michael Zervas, Jon D. Peters, Costanza L. Manganelli, Eric J. Stanton, Yifei Li, Tobias J. Kippenberg, and John E. Bowers

Abstract

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

© 2017 Optical Society of America

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