Abstract

A highly sensitive avalanche photodiode (APD) in 0.35 μm CMOS technology is presented. Due to a thick intrinsic absorption layer, a high responsivity at a low bias voltage, where the avalanche gain is 1, is combined with an excellent avalanche gain at high voltages to achieve a maximum overall responsivity of the APD of more than 10kA/W. This responsivity exceeds that of other submicrometer CMOS APDs by a factor of more than 700. As a figure of merit the responsivity–bandwidth product is defined, and the achieved value of 23.46A/W·GHz is 2.4 times higher than the values found in the literature.

© 2014 Optical Society of America

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