Abstract

While significant progress of electroluminescent (EL) quantum dot light-emitting diodes (QD-LEDs) that rely exclusively on Cd-containing II–VI quantum dots (QDs) has been reported over the past two decades with respect to device processing and performance, devices based on non-Cd QDs as an active emissive layer (EML) remain at the early stage of development. In this work, utilizing highly luminescent colloidal CuInS2 (CIS)/ZnS QDs, all-solution-processed multilayered QD-LEDs are fabricated by sequentially spin depositing a hole transport layer of poly(9-vinlycarbazole), an EML of CIS/ZnS QDs, and an electron transport layer of ZnO nanoparticles. Our focus in device fabrication is to vary the thickness of the QD EML, which is one of the primary determinants in EL performance but has not been addressed in earlier reports. The device with an optimal EML thickness exhibits a peak luminance of 1564cd/m2 and current efficiency of 2.52cd/A. This record value in efficiency is higher by 3–4 times that of CIS QD-LEDs reported previously.

© 2014 Optical Society of America

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