Abstract

We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of $\sim 72.8\mathrm{mA}/\mathrm{W}$ upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of $\sim 72$ relative to the responsivity of $\sim 1.0\mathrm{mA}/\mathrm{W}$ upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of $\sim 7\mathrm{GHz}$ and an open eye diagram at $15\mathrm{Gbit}/\mathrm{s}$ upon 8 V.

© 2013 Optical Society of America

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