Abstract

MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg0.35Zn0.65O/n-Mg0.20Zn0.80O structures, and the p-type Mg0.35Zn0.65O film was realized using a lithium–nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg0.20Zn0.80O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge.

© 2013 Optical Society of America

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