Low-noise single-photon avalanche diodes in 0.25&#xA0;&#x3BC;m high-voltage CMOS technology

Fang-Ze Hsu; Jau-Yang Wu; Sheng-Di Lin

doi:10.1364/OL.38.000055

Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

Fang-Ze Hsu, Jau-Yang Wu, and Sheng-Di Lin

Optics Letters
Vol. 38,
Issue 1,
pp. 55-57
(2013)
•https://doi.org/10.1364/OL.38.000055

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Fang-Ze Hsu, Jau-Yang Wu, and Sheng-Di Lin, "Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology," Opt. Lett. 38, 55-57 (2013)

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Related Topics
Table of Contents Category
- Detectors
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Avalanche photodiodes (APDs) (040.1345)
- Detectors (230.0040)

About this Article
History
- Original Manuscript: September 26, 2012
- Revised Manuscript: November 12, 2012
- Manuscript Accepted: November 23, 2012
- Published: December 20, 2012

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Abstract

By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.

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	Unit	Marwick and Andreou [16]	Richardson et al. [10]	Mandai et al. [17]	Pancheri and Stoppa [12]	Tisa et al. [18]	Field et al. [19]	This Work
Device area	${μm}^{2}$	78	50	78	78	226	39	314 78
Breakdown voltage	V	10	14.36	19.7	20.5	16.0	12.13	76.05 80.40
Average DCR @ $V_{e}$	Hz	$\sim 100$ @ 0.5 V	$\sim 45$ @ 0.8 V	$\sim 842$ @ 2 V	$\sim 100$ @ 4 V	600 @ 5 V	$\sim 16$ @ 0.5 V	275 @ 4 V 16 @ 4.5 V
DCR per unit area	$Hz / {μm}^{2}$	1.3	0.90	10.8	1.3	2.7	0.41	0.87 0.21
PDP @ $V_{e}$ (Peak l)	none	14% @ 0.5 V (670 nm)	25% @ 1.2 V (560 nm)	35% @ 4 V (600 nm)	$\sim 28 %$ @ 4 V ( $\sim 500 nm$ )	45% @ 8 V (500 nm)	29% @ 1.5 V (425 nm)	15% @ 6 V (650 nm)
Fabrication technology	none	0.18 μm TSMC	0.13 μm Image	0.18 μm advanced	0.7 μm HV	0.8 μm	0.13 μm	0.25 μm TSMC HV

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