Abstract

An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N’-bis (naphthalen-1-y1)-N, N’-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33  mW/cm2. The device showed a low dark current of about 3×10−10  A and a high photo-dark current ratio of 1×105 at −2  V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192  A/W at the bias of −1  V.

© 2012 Optical Society of America

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