Abstract
This work presents a novel method to form polycrystalline (CIGS) thin film by co-sputtering of and alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at , while no signal at indicated the exclusion of phase. Hall effect measurements confirmed the polycrystalline thin film to be of type semiconductor with a film resistivity and mobility of and , respectively.
©2012 Optical Society of America
Full Article | PDF ArticleMore Like This
Chi-Li Yeh, Hung-Ru Hsu, Sheng-Hui Chen, and Yung-sheng Liu
Opt. Express 20(S6) A806-A811 (2012)
Jae-Cheol Park, Jeon-Ryang Lee, Mowafak Al-Jassim, and Tae-Won Kim
Opt. Mater. Express 6(11) 3541-3549 (2016)
Shenglin Ye, Xiaohui Tan, Minlin Jiang, Bin Fan, Ken Tang, and Songlin Zhuang
Appl. Opt. 49(9) 1662-1665 (2010)