Abstract

Blue–green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000°C. Transmission electron microscopy and EL studies allowed ascribing the blue–green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.

© 2011 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
    [CrossRef] [PubMed]
  2. J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
    [CrossRef]
  3. M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
    [CrossRef] [PubMed]
  4. Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, Opt. Express 18, 20439(2010).
    [CrossRef] [PubMed]
  5. A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
    [CrossRef]
  6. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
    [CrossRef]
  7. J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
    [CrossRef]
  8. J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
    [CrossRef]
  9. R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
    [CrossRef]
  10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed.(Wiley, 1981).
  11. Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
    [CrossRef]
  12. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
    [CrossRef]
  13. J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415(1984).
    [CrossRef]

2010 (1)

2009 (1)

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

2008 (3)

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

2007 (1)

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

2006 (1)

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

2005 (1)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
[CrossRef] [PubMed]

2004 (1)

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

2002 (1)

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

1985 (1)

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

1984 (1)

J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415(1984).
[CrossRef]

1981 (1)

S. M. Sze, Physics of Semiconductor Devices, 2nd ed.(Wiley, 1981).

Atwater, H. A.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
[CrossRef] [PubMed]

Barreto, J.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Basu, S. N.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

Bourianoff, G. I.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
[CrossRef] [PubMed]

Brorson, S. D.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Carreras, J.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

Cen, Z. H.

Chen, K.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Chen, T. P.

Dekorsy, T.

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

DiMaria, D. J.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Ding, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Ding, L.

Domínguez, C.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Dong, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Fallica, P. G.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Fischetti, M. V.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Forsh, P. A.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Franzò, G.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Garrido, B.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Gebel, T.

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

Goh, W. P.

Helm, M.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

Huang, R.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Iacona, F.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Irrera, A.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Kamenev, B. V.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Kashkarov, P. K.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Kirtley, J. R.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Lebedev, E. A.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Lebour, Y.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

Li, R.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

Li, W.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Liu, Y.

Liu, Z.

Ma, Z.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Miritello, M.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Montserrat, J.

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Morales, A.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Navarro-Urrios, D.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

Negro, L. Dal

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

Pacifici, D.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Perálvarez, M.

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Powell, M. J.

J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415(1984).
[CrossRef]

Priolo, F.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Prucnal, S.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

Rebohle, L.

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

Robertson, J.

J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415(1984).
[CrossRef]

Ryabchikov, Yu. V.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Sanfilippo, D.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Skorupa, W.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

Stefano, G. D.

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

Sun, J. M.

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices, 2nd ed.(Wiley, 1981).

Theis, T. N.

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Timoshenko, V. Yu.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Tsybeskov, L.

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Walters, R. J.

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
[CrossRef] [PubMed]

Wang, D.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Wang, X.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Warga, J.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

Wong, J. I.

Xu, J.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

Yang, M.

Yu, S. F.

Appl. Phys. Lett. (6)

A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. D. Stefano, and P. G. Fallica, Appl. Phys. Lett. 81, 1866 (2002).
[CrossRef]

S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. 90, 181121 (2007).
[CrossRef]

J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Appl. Phys. Lett. 85, 3387 (2004).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, Appl. Phys. Lett. 92, 181106 (2008).
[CrossRef]

J. Robertson and M. J. Powell, Appl. Phys. Lett. 44, 415(1984).
[CrossRef]

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, Appl. Phys. Lett. 93, 151116 (2008).
[CrossRef]

J. Mater. Res. (1)

J. Barreto, M. Perálvarez, A. Morales, B. Garrido, J. Montserrat, and C. Domínguez, J. Mater. Res. 23, 1513(2008).
[CrossRef]

Nanotechnology (1)

M. Perálvarez, J. Barreto, J. Carreras, A. Morales, D. Navarro-Urrios, Y. Lebour, C. Domínguez, and B. Garrido, Nanotechnology 20, 405201 (2009).
[CrossRef] [PubMed]

Nat. Mater. (1)

R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nat. Mater. 4, 143 (2005).
[CrossRef] [PubMed]

Opt. Express (1)

Phys. Rev. B (1)

M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
[CrossRef]

Semiconductor (1)

Yu. V. Ryabchikov, P. A. Forsh, E. A. Lebedev, V. Yu. Timoshenko, P. K. Kashkarov, B. V. Kamenev, and L. Tsybeskov, Semiconductor 40, 1052 (2006).
[CrossRef]

Other (1)

S. M. Sze, Physics of Semiconductor Devices, 2nd ed.(Wiley, 1981).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

(a) Cross section EFTEM image showing the SRSO/SRSN bilayer and Si-ncs into the SiO 2 layer. (b) Scheme of the light emitting device structure.

Fig. 2
Fig. 2

I - V characteristic in accumulation and inversion. The inset shows the PF and SCLC fits in both regimes at low and high voltages, respectively.

Fig. 3
Fig. 3

EL spectra for both gate polarities. Inversion regime (black solid line) and accumulation regime (red dot line). The inset shows the lifetimes of each luminescent species in both gate polarities.

Fig. 4
Fig. 4

Integrated EL intensity versus voltage in accumulation and inversion regimes. The inset depicts the band diagram for both cases.

Metrics