Abstract

We demonstrate a diode-pumped, air-cooled, 100W class SiC-clad Nd:YVO4 active slab laser based on diffusion bonding of two SiC plates to a thin Nd:YVO4 slab. We obtained 83W of cw output power with a slope efficiency of 27% without water cooling. This demonstration initiates a novel (to the best of our knowledge) cooling design for efficient removal of waste heat generated from the diode edge-pumped high-power slab laser at room temperature.

© 2011 Optical Society of America

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  1. W. Kerchner, Solid-State Laser Engineering (Springer, 2006).
  2. J. Vetrovec, Proc. SPIE 4760, 491 (2002).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  5. J. P. Chernoch, “Laser cooling method and apparatus,” U.S. patent 3,679,999 (July 25, 1972).
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    [CrossRef]
  7. G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
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  8. G. A. Nweburgh, A. Michael, and M. Dubinskii, Opt. Express 18, 17066 (2010).
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  11. H. E. Meissner and O. R. Meissner, “Solid state lasers with composite crystal or glass components,” U.S. patent 5,852,622 (December 22, 1998).
  12. B. F. Levine and C. J. Pinzone, “Process for bonding crystalline substrates with different crystal lattices,” U.S. patent 5,966,622 (October 12, 1999).
  13. X. J. Cheng, Z. M. Wang, F. Chen, and J. Q. Xu, Chin. Opt. Lett. 6, 364 (2008).
    [CrossRef]
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    [CrossRef]
  15. L. Xiao, X. J. Cheng, and J. Xu, Opt. Commun. 281, 3781 (2008).
    [CrossRef]

2010 (1)

2008 (2)

2007 (1)

G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
[CrossRef]

2002 (1)

J. Vetrovec, Proc. SPIE 4760, 491 (2002).
[CrossRef]

2001 (2)

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

T. S. Rutherford, W. M. Tulloch, S. Sinha, and R. L. Byer, Opt. Lett. 26, 986 (2001).
[CrossRef]

1989 (1)

J. Eichler, N. Hodgson, and H. Weber, J. Appl. Phys. 66, 4608 (1989).
[CrossRef]

1984 (1)

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

1971 (1)

Beach, R. J.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Byer, R. L.

T. S. Rutherford, W. M. Tulloch, S. Sinha, and R. L. Byer, Opt. Lett. 26, 986 (2001).
[CrossRef]

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

Carlson, J. A.

J. A. Carlson, B. C. Schwartz, and G. Steving, “Diffusion bonding of crystals,” U.S. patent 4,077,558 (March 7, 1978).

Chen, F.

Cheng, X. J.

Chernoch, J. P.

J. P. Chernoch, “Laser cooling method and apparatus,” U.S. patent 3,679,999 (July 25, 1972).

Dubinskii, M.

G. A. Nweburgh, A. Michael, and M. Dubinskii, Opt. Express 18, 17066 (2010).
[CrossRef]

G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
[CrossRef]

Eggleston, J. M.

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

Eichler, J.

J. Eichler, N. Hodgson, and H. Weber, J. Appl. Phys. 66, 4608 (1989).
[CrossRef]

Hettrick, S. J.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Hodgson, N.

J. Eichler, N. Hodgson, and H. Weber, J. Appl. Phys. 66, 4608 (1989).
[CrossRef]

Kane, T. J.

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

Kerchner, W.

W. Kerchner, Solid-State Laser Engineering (Springer, 2006).

Kuhn, K.

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

Levine, B. F.

B. F. Levine and C. J. Pinzone, “Process for bonding crystalline substrates with different crystal lattices,” U.S. patent 5,966,622 (October 12, 1999).

Li, C.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Machenzie, J. I.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Meissner, H. E.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

H. E. Meissner and O. R. Meissner, “Solid state lasers with composite crystal or glass components,” U.S. patent 5,852,622 (December 22, 1998).

Meissner, O. R.

H. E. Meissner and O. R. Meissner, “Solid state lasers with composite crystal or glass components,” U.S. patent 5,852,622 (December 22, 1998).

Merkle, L. D.

G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
[CrossRef]

Michael, A.

Mitchell, S. C.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Newburgh, G. A.

G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
[CrossRef]

Nweburgh, G. A.

Pinzone, C. J.

B. F. Levine and C. J. Pinzone, “Process for bonding crystalline substrates with different crystal lattices,” U.S. patent 5,966,622 (October 12, 1999).

Rutherford, T. S.

Schwartz, B. C.

J. A. Carlson, B. C. Schwartz, and G. Steving, “Diffusion bonding of crystals,” U.S. patent 4,077,558 (March 7, 1978).

Shaffer, P. T. B.

Shepherd, D. P.

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Sinha, S.

Steving, G.

J. A. Carlson, B. C. Schwartz, and G. Steving, “Diffusion bonding of crystals,” U.S. patent 4,077,558 (March 7, 1978).

Tulloch, W. M.

Unternahrer, J.

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

Vetrovec, J.

J. Vetrovec, Proc. SPIE 4760, 491 (2002).
[CrossRef]

Wang, Z. M.

Weber, H.

J. Eichler, N. Hodgson, and H. Weber, J. Appl. Phys. 66, 4608 (1989).
[CrossRef]

Xiao, L.

L. Xiao, X. J. Cheng, and J. Xu, Opt. Commun. 281, 3781 (2008).
[CrossRef]

Xu, J.

L. Xiao, X. J. Cheng, and J. Xu, Opt. Commun. 281, 3781 (2008).
[CrossRef]

Xu, J. Q.

Appl. Opt. (1)

Chin. Opt. Lett. (1)

Electron. Lett. (1)

G. A. Newburgh, M. Dubinskii, and L. D. Merkle, Electron. Lett. 43, 286 (2007).
[CrossRef]

IEEE J. Quantum Electron. (1)

J. M. Eggleston, T. J. Kane, K. Kuhn, J. Unternahrer, and R. L. Byer, IEEE J. Quantum Electron. 20, 289 (1984).
[CrossRef]

J. Appl. Phys. (1)

J. Eichler, N. Hodgson, and H. Weber, J. Appl. Phys. 66, 4608 (1989).
[CrossRef]

J. Phys. D: Appl. Phys. (1)

D. P. Shepherd, S. J. Hettrick, C. Li, J. I. Machenzie, R. J. Beach, S. C. Mitchell, and H. E. Meissner, J. Phys. D: Appl. Phys. 34, 2420 (2001).
[CrossRef]

Opt. Commun. (1)

L. Xiao, X. J. Cheng, and J. Xu, Opt. Commun. 281, 3781 (2008).
[CrossRef]

Opt. Express (1)

Opt. Lett. (1)

Proc. SPIE (1)

J. Vetrovec, Proc. SPIE 4760, 491 (2002).
[CrossRef]

Other (5)

W. Kerchner, Solid-State Laser Engineering (Springer, 2006).

J. P. Chernoch, “Laser cooling method and apparatus,” U.S. patent 3,679,999 (July 25, 1972).

J. A. Carlson, B. C. Schwartz, and G. Steving, “Diffusion bonding of crystals,” U.S. patent 4,077,558 (March 7, 1978).

H. E. Meissner and O. R. Meissner, “Solid state lasers with composite crystal or glass components,” U.S. patent 5,852,622 (December 22, 1998).

B. F. Levine and C. J. Pinzone, “Process for bonding crystalline substrates with different crystal lattices,” U.S. patent 5,966,622 (October 12, 1999).

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Figures (4)

Fig. 1
Fig. 1

Vertical and side views of the edge-pumped SiC-clad Nd : YVO 4 slab laser. The SiC claddings are clamped in copper heat sinks.

Fig. 2
Fig. 2

Temperature distribution in SiC or YVO 4 cladding and Nd : YVO 4 slab; room temperature is 300 K .

Fig. 3
Fig. 3

Thermal stress distribution in the Nd : YVO 4 active slab with different cladding.

Fig. 4
Fig. 4

Output power versus pump power for the Nd : YVO 4 edge pumping air-cooled SiC-clad slab laser.

Tables (1)

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Table 1 Thermal Properties of SiC and Nd : YVO 4

Equations (2)

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2 T = Q k ,
σ = α E ( 1 ν ) Δ T ,

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