Abstract

We study numerically the dependence of dispersive and birefringence properties of silicon nanowires on waveguide dimensions and show that they have a strong geometrical dependence when nanowire dimensions become comparable to the wavelength of light inside the device. We develop a graphical method for engineering two or more dispersion parameters simultaneously and use it to demonstrate the possibility of fabricating silicon nanowires with flattened dispersion curves over a wide spectral range with normal or anomalous nominal values. We quantify polarization-mode dispersion through the differential group delay and show that it can acquire large values for properly designed nanowires. Our analysis should help in designing silicon-based photonic integrated circuits.

© 2010 Optical Society of America

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