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Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 μ m

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Abstract

This work demonstrates a rib waveguide photodetector based on a vertical Si p-i-n junction with Ge islands operating in the spectral region around λ=1.55μm at room temperature. A vertical stack of four layers of Ge islands is grown by molecular beam epitaxy on a silicon-on-insulator. Each layer is organized in a two-dimensional square grid with a period of 460nm. The spectral response of the detector extends well beyond 1.6μm at 300K. The absorption length of 135μm (at 1/e decrease of intensity) at λ=1.55μm along the waveguide allows for relatively small-size devices for all-on-one-platform integration.

© 2009 Optical Society of America

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