Abstract
We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at wavelength. An InP-based active medium was fused with distributed Bragg reflector on a wafer level, resulting in an integrated monolithic gain mirror. An intracavity wedged diamond heat-spreader capillary bonded to the gain chip provides efficient heat removal from the gain structure without disturbing the spectrum of the mode-locked laser. The laser produces over of average output power at with pulse width. The total output power accounting for all output beams emerging from the cavity was . The results reveal an essential advantage of wafer fusion processing of disparate materials over monolithically grown InP-based gain structures and demonstrate the high potential of this technique for power scaling of long-wavelength semiconductor disk lasers.
© 2009 Optical Society of America
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