Abstract
We report on the passive mode locking of a diode-pumped laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about and an average output power of was achieved. Our result shows that could be an excellent gain medium for diode-pumped high-power mode-locked lasers.
© 2008 Optical Society of America
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