Abstract

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3dB emission bandwidth of 146nm centered at 984nm with cw output power as high as 15mW at room temperature corresponding to an extremely small coherence length of 6.6μm.

© 2008 Optical Society of America

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