Abstract

We present the finding that photoluminescence intensity in ZnSe crystal is enhanced after exposure to a femtosecond laser beam. After the crystal was illuminated with laser light of 1.04MWcm2 during 300s, photoluminescence intensity was increased approximately 20%. The region in which photoluminescence intensity was enhanced was localized in the optical axis, because this phenomenon occurred in the two-photon excitation process. It is possible to achieve three-dimensional control of photoluminescence intensity by illumination with laser light.

© 2007 Optical Society of America

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