Abstract

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve 3dB laser output modulations of 6.5GHz for two-stage and 9.4GHz for three-stage devices in response to small-signal current injection at an operating temperature of 50°C.

© 2006 Optical Society of America

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