Abstract

We demonstrate extremely efficient germanium-on-silicon metal–semiconductor–metal photodetectors with responsivities (R) as high as 0.85AW at 1.55μm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% lattice mismatch. Photodiodes on such layers exhibit reverse dark currents of 100mAcm2 and external quantum efficiency up to 68%. This technology is promising to realize monolithically integrated optoelectronics.

© 2006 Optical Society of America

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