Abstract
We report measurements of selected chalcogenide glasses using a modified Z-scan technique. Measurements were made with picosecond pulses emitted by a Q-switched, mode-locked Nd:YAG laser at under conditions suitable to characterize ultrafast nonlinearities. The nonlinear index increases significantly up to 246 times the for fused silica with an increase of units and also very slightly with the replacement of Ge by Ga or S by Se. We have attributed the variation of to the total number of electronic lone pairs and to the position of the absorption band gap, which are induced by the presence of units or Se―Se bonds in the glass structure.
© 2006 Optical Society of America
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