Abstract

A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.

© 2005 Optical Society of America

High-energy saturable absorber mode-locked fiber laser system

Janet W. Lou and Marc Currie
Opt. Lett. 30(4) 406-408 (2005)

220-fs erbium-ytterbium:glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber

F. J. Grawert, J. T. Gopinath, F. Ö. Ilday, H. M. Shen, E. P. Ippen, F. X. Kärtner, S. Akiyama, J. Liu, K. Wada, and L. C. Kimerling
Opt. Lett. 30(3) 329-331 (2005)

Linewidth and relative intensity noise measurements of longitudinal modes in ultrahigh-speed mode-locked laser diodes

Kentaro Haneda, Masato Yoshida, Masataka Nakazawa, Hiroyuki Yokoyama, and Yoh Ogawa
Opt. Lett. 30(9) 1000-1002 (2005)

High-power diode-pumped Q-switched and mode-locked Nd:YVO₄ laser with a Cr⁴⁺:YAG saturable absorber

Yung-Fu Chen, S. W. Tsai, and S. C. Wang
Opt. Lett. 25(19) 1442-1444 (2000)

Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current

Jin Li, Bing Xiong, Yi Luo, Changzheng Sun, Jian Wang, Zhibiao Hao, Yanjun Han, Lai Wang, and Hongtao Li
Opt. Express 24(8) 8420-8428 (2016)