Abstract
Passive mode locking of an optically pumped, InP-based, semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of and emits near-transform-limited pulses with an average output power of .
© 2005 Optical Society of America
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