Abstract

We present a new technique for measuring the temperature profiles of visible LED chips by use of a nematic liquid crystal with IR laser illumination. The LEDs studied have a multi-quantum-well InGaN/GaN/sapphire structure. New features in this technique are the use of a high-power IR laser beam as the sensing light and the insertion of a color filter in the optical path to block the high-intensity LED light. For the LEDs measured, the conversion efficiency decreases by 70% when the junction temperature rises from 25 to 107 °C. This technique is a valuable tool for studying the performance of LEDs as a function of junction temperature.

© 2004 Optical Society of America

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References

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  1. M. Arik, J. Petroski, and S. Weaver, in The Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Institute of Electrical and Electronics Engineers, Piscataway, N.J., 2002), pp. 113–120.
  2. M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
    [CrossRef]
  3. C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
    [CrossRef]
  4. S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
    [CrossRef]
  5. P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
    [CrossRef]
  6. M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
    [CrossRef]
  7. J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
    [CrossRef]

2004 (1)

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

2003 (1)

J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
[CrossRef]

1999 (1)

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

1996 (1)

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

1993 (1)

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

1982 (1)

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Arik, M.

M. Arik, J. Petroski, and S. Weaver, in The Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Institute of Electrical and Electronics Engineers, Piscataway, N.J., 2002), pp. 113–120.

Chiu, P.-C.

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

Christen, J.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Eastman, L. F.

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

Fischer, P.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Fujihara, M.

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

Huh, C.

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

Kamp, M.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Kirchner, C.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Lee, C. C.

J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
[CrossRef]

Miki, A.

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

Nishiguchi, M.

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

Nishizawa, H.

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

Osinski, M.

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

Park, J.

J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
[CrossRef]

Park, S. J.

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

Petroski, J.

M. Arik, J. Petroski, and S. Weaver, in The Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Institute of Electrical and Electronics Engineers, Piscataway, N.J., 2002), pp. 113–120.

Phillips, B. S.

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

Sakurai, T.

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Sanada, T.

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Schaff, W. J.

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

Schwegler, V.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Shin, M.

J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
[CrossRef]

Umebu, I.

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Wada, O.

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Weaver, S.

M. Arik, J. Petroski, and S. Weaver, in The Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Institute of Electrical and Electronics Engineers, Piscataway, N.J., 2002), pp. 113–120.

Yamakoshi, S.

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

Zacharias, M.

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

Zeller, J.

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

Appl. Phys. Lett. (3)

M. Osinski, J. Zeller, P.-C. Chiu, and B. S. Phillips, Appl. Phys. Lett. 69, 898 (1996).
[CrossRef]

S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, Appl. Phys. Lett. 40, 144 (1982).
[CrossRef]

P. Fischer, J. Christen, M. Zacharias, V. Schwegler, C. Kirchner, and M. Kamp, Appl. Phys. Lett. 75, 3440 (1999).
[CrossRef]

IEEE Electron Device Lett. (2)

C. Huh, W. J. Schaff, L. F. Eastman, and S. J. Park, IEEE Electron Device Lett. 25, 424 (2004).
[CrossRef]

J. Park, M. Shin, and C. C. Lee, IEEE Electron Device Lett. 24, 424 (2003).
[CrossRef]

IEEE Trans. Component Hybrids Manuf. Technol. (1)

M. Nishiguchi, M. Fujihara, A. Miki, and H. Nishizawa, IEEE Trans. Component Hybrids Manuf. Technol. 16, 543 (1993).
[CrossRef]

Other (1)

M. Arik, J. Petroski, and S. Weaver, in The Eighth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Institute of Electrical and Electronics Engineers, Piscataway, N.J., 2002), pp. 113–120.

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Figures (4)

Fig. 1
Fig. 1

(a) Measured electrical and electro-optic properties of a MQW InGaN/GaN/sapphire LED at a case temperature of 25 °C. (b) New NLC thermal measurement configuration with a polarized laser beam λ=780 nm.

Fig. 2
Fig. 2

(a) Image of the green LED coated with a NLC layer having a 29 °C transition temperature. (b) Image of the same LED driven with 23.6 mW of electrical power showing a hot region between the n contact and the p contact.

Fig. 3
Fig. 3

Temperature profiles obtained by superimposing contours of four hot zones obtained when the base temperature was increased by 1 °C at a time.

Fig. 4
Fig. 4

Measured junction temperature plotted versus electrical drive power and versus measured conversion efficiency of the green LED studied.

Equations (1)

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Θjc=Tj-TcP,

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