Abstract

We have demonstrated wavelength stabilization in an 821-nm AlGaAs three-section tunable distributed Bragg reflector (DBR) semiconductor laser diode (LD) that consists of active, phase-controlled, and DBR regions. We injected two separate, complementary currents into the active and the phase-controlled regions in the DBR-LD to suppress wavelength shift. This modulation method was applied to the LD fundamental wave in a second-harmonic-generation (SHG) laser, and the oscillating wavelength was maintained within the phase-matching acceptance range of the SHG device during modulation. A peak blue-violet light power of 62 mW was obtained for the ideal modulation waveform.

© 2003 Optical Society of America

Wide-wavelength–tunable distributed Bragg reflector laser diode with high thermal efficiency

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Frequency-stabilized high-power violet laser diode with an ytterbium hollow-cathode lamp

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Opt. Lett. 28(4) 245-247 (2003)