Abstract

Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In0.67Ga0.33As0.72P0.28 quantum wells near the n-cladding layer and the two In0.53Ga0.47As quantum wells near the p-cladding layer, all bounded by In0.86Ga0.14As0.3P0.7 barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 μm, and the FWHM could be near 300  nm.

© 2001 Optical Society of America

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