We demonstrate high-density–speed phase-change recording–reading by use of a pyramidal silicon structure. The contact slider, which has a pyramidal silicon probe array with height dispersion of less than 10 nm, is fabricated by use of a silicon-on-insulator wafer. By illumination with a laser beam of one element of the probe array, we find the shortest phase-change mark length and the carrier-to-noise ratio to be 110 nm and 10 dB, respectively, corresponding to a data transmission rate of 2.0 MHz. This rate can be increased to 200 MHz by use of all elements of the probe array.
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