Abstract

Three-photon absorption in a GaAsP photodiode is used for what is believed to be the first time for nonlinear optical autocorrelation at wavelengths from 1.4 to 1.6 µm. Theoretical intensity dependence and contrast ratios are achieved, and the ratio of the three- to the two-photon-absorption coefficient is measured. Finally, it is demonstrated that pulse asymmetry can be measured with no direction-of-time ambiguity by use of unbalanced three-photon-absorption autocorrelation.

© 1999 Optical Society of America

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References

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  1. E. P. Ippen and C. V. Shank, in Ultrashort Light Pulses, S. L. Shapiro, ed. (Springer-Verlag, Berlin, 1977), pp. 83–122.
  2. Y. Takagi, T. Kobayashi, K. Yoshihara, and S. Imamura, Opt. Lett. 17, 658 (1992).
    [CrossRef] [PubMed]
  3. J. K. Ranka, A. L. Gaeta, A. Baltuska, M. S. Pshenichnikov, and D. A. Wiersma, Opt. Lett. 22, 1344 (1997).
    [CrossRef]
  4. D. T. Reid, W. Sibbett, J. M. Dudley, L. P. Barry, B. Thomsen, and J. D. Harvey, Appl. Opt. 37, 8142 (1998).
    [CrossRef]
  5. E. I. Blount and J. R. Klauder, J. Appl. Phys. 40, 2874 (1969).
    [CrossRef]
  6. D. H. Auston, Appl. Phys. Lett. 18, 249 (1971).
    [CrossRef]
  7. D. J. Kane and R. Trebino, Opt. Lett. 18, 823 (1993).
    [CrossRef] [PubMed]
  8. C. Iaconis and I. A. Walmsley, Opt. Lett. 23, 792 (1998).
    [CrossRef]
  9. K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
    [CrossRef]
  10. A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.
  11. P. Langlois and E. P. Ippen, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 263.
  12. I. M. Catalano and A. Cingolani, J. Appl. Phys. 50, 5638 (1979).
    [CrossRef]
  13. B. S. Wherrett, J. Opt. Soc. Am. B 1, 67 (1984).
    [CrossRef]
  14. Value for GaAs. EP is weakly dependent on the semiconductor material.13
  15. J. Peatross and A. Rundquist, J. Opt. Soc. Am. B 15, 216 (1998).
    [CrossRef]
  16. D. J. Kane, IEEE J. Quantum. Electron. 35, 421 (1999).
    [CrossRef]

1999 (1)

D. J. Kane, IEEE J. Quantum. Electron. 35, 421 (1999).
[CrossRef]

1998 (3)

1997 (1)

1993 (1)

1992 (1)

1989 (1)

K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
[CrossRef]

1984 (1)

1979 (1)

I. M. Catalano and A. Cingolani, J. Appl. Phys. 50, 5638 (1979).
[CrossRef]

1971 (1)

D. H. Auston, Appl. Phys. Lett. 18, 249 (1971).
[CrossRef]

1969 (1)

E. I. Blount and J. R. Klauder, J. Appl. Phys. 40, 2874 (1969).
[CrossRef]

Auston, D. H.

D. H. Auston, Appl. Phys. Lett. 18, 249 (1971).
[CrossRef]

Baltuska, A.

J. K. Ranka, A. L. Gaeta, A. Baltuska, M. S. Pshenichnikov, and D. A. Wiersma, Opt. Lett. 22, 1344 (1997).
[CrossRef]

A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.

Barry, L. P.

Blount, E. I.

E. I. Blount and J. R. Klauder, J. Appl. Phys. 40, 2874 (1969).
[CrossRef]

Catalano, I. M.

I. M. Catalano and A. Cingolani, J. Appl. Phys. 50, 5638 (1979).
[CrossRef]

Cingolani, A.

I. M. Catalano and A. Cingolani, J. Appl. Phys. 50, 5638 (1979).
[CrossRef]

Dudley, J. M.

Gaeta, A. L.

Harvey, J. D.

Iaconis, C.

Imamura, S.

Ippen, E. P.

E. P. Ippen and C. V. Shank, in Ultrashort Light Pulses, S. L. Shapiro, ed. (Springer-Verlag, Berlin, 1977), pp. 83–122.

P. Langlois and E. P. Ippen, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 263.

Kane, D. J.

D. J. Kane, IEEE J. Quantum. Electron. 35, 421 (1999).
[CrossRef]

D. J. Kane and R. Trebino, Opt. Lett. 18, 823 (1993).
[CrossRef] [PubMed]

Klauder, J. R.

E. I. Blount and J. R. Klauder, J. Appl. Phys. 40, 2874 (1969).
[CrossRef]

Kobayashi, T.

Langlois, P.

P. Langlois and E. P. Ippen, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 263.

Mogi, K.

K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
[CrossRef]

Naganuma, K.

K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
[CrossRef]

Peatross, J.

Pshenichnikov, M. S.

J. K. Ranka, A. L. Gaeta, A. Baltuska, M. S. Pshenichnikov, and D. A. Wiersma, Opt. Lett. 22, 1344 (1997).
[CrossRef]

A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.

Pugzlys, A.

A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.

Ranka, J. K.

Reid, D. T.

Rundquist, A.

Shank, C. V.

E. P. Ippen and C. V. Shank, in Ultrashort Light Pulses, S. L. Shapiro, ed. (Springer-Verlag, Berlin, 1977), pp. 83–122.

Sibbett, W.

Takagi, Y.

Thomsen, B.

Trebino, R.

Walmsley, I. A.

Wherrett, B. S.

Wiersma, D. A.

J. K. Ranka, A. L. Gaeta, A. Baltuska, M. S. Pshenichnikov, and D. A. Wiersma, Opt. Lett. 22, 1344 (1997).
[CrossRef]

A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.

Yamada, H.

K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
[CrossRef]

Yoshihara, K.

Appl. Opt. (1)

Appl. Phys. Lett. (1)

D. H. Auston, Appl. Phys. Lett. 18, 249 (1971).
[CrossRef]

IEEE J. Quantum Electron. (1)

K. Naganuma, K. Mogi, and H. Yamada, IEEE J. Quantum Electron. 25, 1225 (1989).
[CrossRef]

IEEE J. Quantum. Electron. (1)

D. J. Kane, IEEE J. Quantum. Electron. 35, 421 (1999).
[CrossRef]

J. Appl. Phys. (2)

E. I. Blount and J. R. Klauder, J. Appl. Phys. 40, 2874 (1969).
[CrossRef]

I. M. Catalano and A. Cingolani, J. Appl. Phys. 50, 5638 (1979).
[CrossRef]

J. Opt. Soc. Am. B (2)

Opt. Lett. (4)

Other (4)

Value for GaAs. EP is weakly dependent on the semiconductor material.13

E. P. Ippen and C. V. Shank, in Ultrashort Light Pulses, S. L. Shapiro, ed. (Springer-Verlag, Berlin, 1977), pp. 83–122.

A. Baltuska, A. Pugzlys, M. S. Pshenichnikov, and D. A. Wiersma, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 264.

P. Langlois and E. P. Ippen, in Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1999), p. 263.

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Figures (4)

Fig. 1
Fig. 1

Measured 2PA and 3PA intensity autocorrelation traces. Inset, measured 3PA interferometric autocorrelation. PD, photodiode.

Fig. 2
Fig. 2

Peak and background signals of the 3PA intensity autocorrelation versus average power on the GaAsP photodiode.

Fig. 3
Fig. 3

Measured 2PA and 3PA intensity autocorrelation traces of a test double pulse, obtained with an unbalanced autocorrelator.

Fig. 4
Fig. 4

Calculated unbalanced 3PA intensity autocorrelations for sech pulse shapes of different degrees of asymmetry.

Equations (2)

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β3=β29432w2tpI022 PAw2tpI033 PAS3 PAS2 PA,
S3 PAa3I1t3+9a2I1t2I2t+τ+9aI1tI2t+τ2+I2t+τ3.

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