Abstract

Crystalline Ti:sapphire (Ti:Al<sub>2</sub>O<sub>3</sub>) thin films were grown at low temperatures upon Al<sub>2</sub>O<sub>3</sub> (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti–Al alloy target and O<sub>2</sub> . The films were investigated <i>ex situ</i> by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti<sup>3+</sup> ions in bulk samples of Al<sub>2</sub>O<sub>3</sub> .

© 1999 Optical Society of America

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