The thermal diffusion of Ti3+ ions into sapphire is demonstrated, and the spectroscopic characteristics of the locally doped region are presented. The spectral line shape, polarization dependence, and excited-state lifetime of indiffused Ti:sapphire are in excellent agreement with previously published data for high-quality, bulk-doped Ti:sapphire laser crystals. The observed diffusion rate at 1950 °C is of the order of D = 10−14 m2 s−1. These results represent a significant step in the development of a versatile broadly tunable waveguide laser based on the Ti3+:sapphire material system established for conventional bulk lasers.
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