Abstract

The thermal diffusion of Ti3+ ions into sapphire is demonstrated, and the spectroscopic characteristics of the locally doped region are presented. The spectral line shape, polarization dependence, and excited-state lifetime of indiffused Ti:sapphire are in excellent agreement with previously published data for high-quality, bulk-doped Ti:sapphire laser crystals. The observed diffusion rate at 1950 °C is of the order of D = 10−14 m2 s−1. These results represent a significant step in the development of a versatile broadly tunable waveguide laser based on the Ti3+:sapphire material system established for conventional bulk lasers.

© 1996 Optical Society of America

Full Article  |  PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Figures (3)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Metrics

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription