Abstract

Polarization-independent waveguiding at 1.32 and 1.54 μm was observed in single-crystal S1−xyGexCy grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 μm. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93–0.99-eV range, in agreement with theory.

© 1996 Optical Society of America

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Errata

Frederick F. Shaapur, "Infrared wave guiding in Si1–x–yGexCy upon silicon: errata," Opt. Lett. 27, 1186-1186 (2002)
https://www.osapublishing.org/ol/abstract.cfm?uri=ol-27-13-1186

References

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  1. P. Herve, L. K. J. VanDamme, Infrared Phys. Technol. 35, 609 (1994).
    [CrossRef]
  2. O. Madelung, Semiconductors: Group IV Elements and III–V Compounds (Springer-Verlag, Berlin, 1991).
  3. J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
    [CrossRef]
  4. J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).
  5. J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
    [CrossRef]
  6. J. Gryko, O. F. Sankey, Phys. Rev. B 51, 7195 (1995).
    [CrossRef]
  7. Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
    [CrossRef]

1995 (3)

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
[CrossRef]

J. Gryko, O. F. Sankey, Phys. Rev. B 51, 7195 (1995).
[CrossRef]

1994 (2)

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

P. Herve, L. K. J. VanDamme, Infrared Phys. Technol. 35, 609 (1994).
[CrossRef]

Atzmon, Z.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Bair, A. E.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Berger, P. R.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Chandrasekhar, D.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Chen, F.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Gryko, J.

J. Gryko, O. F. Sankey, Phys. Rev. B 51, 7195 (1995).
[CrossRef]

Herve, P.

P. Herve, L. K. J. VanDamme, Infrared Phys. Technol. 35, 609 (1994).
[CrossRef]

Hervig, R. L.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Hits, D.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Ismat Shah, S.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Jacquez, E. J.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Khan, A.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Kolodzey, J.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Madelung, O.

O. Madelung, Semiconductors: Group IV Elements and III–V Compounds (Springer-Verlag, Berlin, 1991).

Mayer, J. W.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

O’Neil, P. A.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

Orner, B. A.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Robinson, McD.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Roe, K.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

Sankey, O. F.

J. Gryko, O. F. Sankey, Phys. Rev. B 51, 7195 (1995).
[CrossRef]

Shao, X.

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Smith, D. J.

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Swann, C. P.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Unruh, K. M.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

VanDamme, L. K. J.

P. Herve, L. K. J. VanDamme, Infrared Phys. Technol. 35, 609 (1994).
[CrossRef]

Waite, M. M.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

Xie, J.

J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
[CrossRef]

Xie, X.

J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
[CrossRef]

Zhang, K.

J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
[CrossRef]

Zhang, S.

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

Appl. Phys. Lett. (2)

J. Kolodzey, P. A. O’Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite, Appl. Phys. Lett. 67, 1865 (1995).
[CrossRef]

Z. Atzmon, A. E. Bair, E. J. Jacquez, J. W. Mayer, D. Chandrasekhar, D. J. Smith, R. L. Hervig, McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
[CrossRef]

Infrared Phys. Technol. (1)

P. Herve, L. K. J. VanDamme, Infrared Phys. Technol. 35, 609 (1994).
[CrossRef]

J. Appl. Phys. (1)

J. Xie, K. Zhang, X. Xie, J. Appl. Phys. 77, 3868 (1995).
[CrossRef]

Phys. Rev. B (1)

J. Gryko, O. F. Sankey, Phys. Rev. B 51, 7195 (1995).
[CrossRef]

Other (2)

O. Madelung, Semiconductors: Group IV Elements and III–V Compounds (Springer-Verlag, Berlin, 1991).

J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. Ismat Shah, C. P. Swann, K. M. Unruh, “Optical and electronic properties of SiGeC alloys grown on Si substrates,” J. Cryst. Growth (to be published).

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Figures (4)

Fig. 1
Fig. 1

Ternary composition diagram for Si1−xyGexCy.

Fig. 2
Fig. 2

Cubic lattice parameter of Si1−xyGexCy.

Fig. 3
Fig. 3

Band gap of unstrained Si1−xyGexCy alloys.

Fig. 4
Fig. 4

Planar optical waveguiding in SiGeC/Si.

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