Abstract

Polarization-independent waveguiding at 1.32 and 1.54 μm was observed in single-crystal S1−xyGexCy grown nearly lattice matched upon Si(100) by chemical vapor deposition. Losses were <5 dB/cm at 1.54 μm. Experiments indicate that the band gap of three SiGeC alloy waveguides was in the 0.93–0.99-eV range, in agreement with theory.

© 1996 Optical Society of America

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Corrections

Frederick F. Shaapur, "Infrared wave guiding in Si1–x–yGexCy upon silicon: errata," Opt. Lett. 27, 1186-1186 (2002)
https://www.osapublishing.org/ol/abstract.cfm?uri=ol-27-13-1186

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