Abstract

Resonant grating–waveguide structures formed with InP/InGaAsP semiconductor materials were tested to show light modulation at a wavelength of 1.55 μm. Narrow, subnanometer resonant spectral bandwidths and a ratio of reflected intensities between resonance and away from resonance of greater than 50 were measured. For a resonant structure with an area of 3 mm × 3 mm, the modulation frequency reached 5 MHz.

© 1996 Optical Society of America

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References

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  7. J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
    [CrossRef]

1995 (1)

1992 (1)

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

1990 (1)

M. T. Gale, K. Knop, R. H. Morf, Proc. SPIE 1210, 83 (1990).
[CrossRef]

1987 (1)

I. A. Avrutskii, V. A. Sychugov, Sov. Phys. Tech. Phys. 32, 235 (1987).

1986 (1)

E. Popov, L. Mashev, D. Maystre, Opt. Acta 33, 607 (1986).
[CrossRef]

1982 (1)

P. Sheng, R. S. Stepleman, P. N. Sanda, Phys. Rev. B 26, 2907 (1982).
[CrossRef]

1977 (1)

A. Yariv, M. Nakamura, IEEE J. Quantum Electron. QE-13, 233 (1977).
[CrossRef]

Avrutskii, I. A.

I. A. Avrutskii, V. A. Sychugov, Sov. Phys. Tech. Phys. 32, 235 (1987).

Cavailles, J. A.

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Erman, M.

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Gale, M. T.

M. T. Gale, K. Knop, R. H. Morf, Proc. SPIE 1210, 83 (1990).
[CrossRef]

Jarry, P.

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Knop, K.

M. T. Gale, K. Knop, R. H. Morf, Proc. SPIE 1210, 83 (1990).
[CrossRef]

Magnusson, R.

Mashev, L.

E. Popov, L. Mashev, D. Maystre, Opt. Acta 33, 607 (1986).
[CrossRef]

Maystre, D.

E. Popov, L. Mashev, D. Maystre, Opt. Acta 33, 607 (1986).
[CrossRef]

Morf, R. H.

M. T. Gale, K. Knop, R. H. Morf, Proc. SPIE 1210, 83 (1990).
[CrossRef]

Nakamura, M.

A. Yariv, M. Nakamura, IEEE J. Quantum Electron. QE-13, 233 (1977).
[CrossRef]

Popov, E.

E. Popov, L. Mashev, D. Maystre, Opt. Acta 33, 607 (1986).
[CrossRef]

Renaud, M.

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Sanda, P. N.

P. Sheng, R. S. Stepleman, P. N. Sanda, Phys. Rev. B 26, 2907 (1982).
[CrossRef]

Sheng, P.

P. Sheng, R. S. Stepleman, P. N. Sanda, Phys. Rev. B 26, 2907 (1982).
[CrossRef]

Stepleman, R. S.

P. Sheng, R. S. Stepleman, P. N. Sanda, Phys. Rev. B 26, 2907 (1982).
[CrossRef]

Sychugov, V. A.

I. A. Avrutskii, V. A. Sychugov, Sov. Phys. Tech. Phys. 32, 235 (1987).

Vinchant, J. F.

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Wang, S. S.

Yariv, A.

A. Yariv, M. Nakamura, IEEE J. Quantum Electron. QE-13, 233 (1977).
[CrossRef]

Appl. Opt. (1)

IEEE J. Quantum Electron. (1)

A. Yariv, M. Nakamura, IEEE J. Quantum Electron. QE-13, 233 (1977).
[CrossRef]

J. Lightwave Technol. (1)

J. F. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, M. Renaud, J. Lightwave Technol. 10, 63 (1992).
[CrossRef]

Opt. Acta (1)

E. Popov, L. Mashev, D. Maystre, Opt. Acta 33, 607 (1986).
[CrossRef]

Phys. Rev. B (1)

P. Sheng, R. S. Stepleman, P. N. Sanda, Phys. Rev. B 26, 2907 (1982).
[CrossRef]

Proc. SPIE (1)

M. T. Gale, K. Knop, R. H. Morf, Proc. SPIE 1210, 83 (1990).
[CrossRef]

Sov. Phys. Tech. Phys. (1)

I. A. Avrutskii, V. A. Sychugov, Sov. Phys. Tech. Phys. 32, 235 (1987).

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Figures (4)

Fig. 1
Fig. 1

GSW structure with InP/InGaAsP materials.

Fig. 2
Fig. 2

Experimental setup for evaluating the GSW structures.

Fig. 3
Fig. 3

Experimental results for the reflected intensity as a function of wavelength.

Fig. 4
Fig. 4

Reflection intensity response to an externally applied modulated voltage: upper curve, reflected intensity in arbitrary units; lower curve, applied voltage of 5 V ac in reverse bias.

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