Abstract

Resonant grating–waveguide structures formed with InP/InGaAsP semiconductor materials were tested to show light modulation at a wavelength of 1.55 μm. Narrow, subnanometer resonant spectral bandwidths and a ratio of reflected intensities between resonance and away from resonance of greater than 50 were measured. For a resonant structure with an area of 3 mm × 3 mm, the modulation frequency reached 5 MHz.

© 1996 Optical Society of America

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