Abstract

Optical dephasing measurements are reported for Tm³⁺:Y₂Si₂O₇ as a function of temperature and laser excitation intensity. By use of photon echoes, a coherence time of T₂ = 23 μs was measured at 1.24 K for the ³H₆(1) → ³H₄(1) transition at 790.427 nm, corresponding to a homogeneous linewidth of 14 kHz. The relatively broad inhomogeneous linewidth of 100 GHz gives an inhomogeneous-to-homogeneous linewidth ratio of Γ_inh/Γ_h = 7 × 10⁶. This large ratio, a transition wavelength suitable for GaAlAs semiconductor lasers, and the absence of hyperfine structure hole burning make this material a good candidate for time-domain signal processing and transient optically addressed data storage.

© 1996 Optical Society of America

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