Abstract

An analytical expression for the carrier deficit ΔN from the nominal threshold carrier density Nt of an above-threshold biased semiconductor laser has been deduced. As a result, both the mode spectra and the mode-suppression ratio of a semiconductor laser can be studied analytically. The measured dependence of the mode-suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser confirms the theoretical predictions.

© 1994 Optical Society of America

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