Abstract

We demonstrate integrated semiconductor optical devices with ultrafast temporal responses based on the plasma-dispersion effect. The geometry of the devices removes the dependence of the modulation time on the free-carrier dynamics. We present the theoretical analysis of the performance of such devices. We show that a silicon-based device with a free-carrier lifetime of 1.4 ns can be modulated on a time scale of only 20 ps. The ultrafast operation is verified experimentally.

© 2005 Optical Society of America

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