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Optica Publishing Group

13 September 2021, Volume 29, Issue 19, pp. 29587-30977  
112 articles

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Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

Opt. Express 29(19), 29651-29660 (2021)  View: HTML | PDF

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

Opt. Express 29(19), 29780-29788 (2021)  View: HTML | PDF

Photoluminescence of InGaN-based red multiple quantum wells

Opt. Express 29(19), 30237-30243 (2021)  View: HTML | PDF

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones

Opt. Express 29(19), 30532-30542 (2021)  View: HTML | PDF

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