Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?

Weidong Wang, Chunshuang Chu, Jiamang Che, Sheng Hang, Hua Shao, Kangkai Tian, Yonghui Zhang, and Zi-Hui Zhang

Opt. Express 29(19), 29651-29660 (2021)  View: HTML | PDF

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, and Kazuhiro Ohkawa

Opt. Express 29(19), 29780-29788 (2021)  View: HTML | PDF

Photoluminescence of InGaN-based red multiple quantum wells

Xin Hou, Shaosheng Fan, Daisuke Iida, Yang Mei, Baoping Zhang, and Kazuhiro Ohkawa

Opt. Express 29(19), 30237-30243 (2021)  View: HTML | PDF

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones

Gai Zhang, Hua Shao, Muyao Zhang, Ziqiang Zhao, Chunshuang Chu, Kangkai Tian, Chao Fan, Yonghui Zhang, and Zi-Hui Zhang

Opt. Express 29(19), 30532-30542 (2021)  View: HTML | PDF