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OSA Publishing

30 September 2019, Volume 27, Issue 20, pp. 27396-29470; Energy Express pp: A1338–A1635   190 articles


Light-emitting Diodes

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

Opt. Express 27(20), A1458-A1466 (2019)  View: HTML | PDF

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

Opt. Express 27(20), A1506-A1516 (2019)  View: HTML | PDF

On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication

Opt. Express 27(20), A1517-A1528 (2019)  View: HTML | PDF

Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier

Opt. Express 27(20), A1544-A1553 (2019)  View: HTML | PDF

Optical polarization characteristics and light extraction behavior of deep-ultraviolet LED flip-chip with full-spatial omnidirectional reflector system

Opt. Express 27(20), A1601-A1614 (2019)  View: HTML | PDF

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