Special Joint Issue of the Journal of the Optical Society of America B and Optics Express

Submission Deadline: March 31, 1999

The special issue will serve to give a snapshot of the recent progress in the study of spatial and polarization dynamics in semiconductor lasers. Both the Journal of the Optical Society of America B (JOSA B) and Optics Express (OpEx) will publish special issues. While JOSA B publishes papers in a traditional format, OpEx can easily handle color pictures and video or audio animations because of its electronic format.

Several recent developments have resulted in significant progress in the study of transverse effects and spatial mode dynamics in semiconductor lasers. Demands for higher and higher output powers have led to the development of wide-stripe lasers, coupled laser arrays, integrated master-oscillator power amplifiers (MOPA’s), and other more complex laser structures for which the spatial dependence of the laser mode becomes important. This is especially true for vertical-cavity surface-emitting lasers (VCSEL’s), devices that have recently become commercially available and are being proposed for a multitude of interesting applications. In the case of a VCSEL, the transverse-mode behavior is inherently more complex than that of traditional edge-emitting lasers because of the large Fresnel number associated with VCSEL’s.

The recent interest in spatiotemporal dynamics of such lasers as an example of well-controlled, space-extended, self-organizing systems has led to new understanding of patterns, defects, and other coherent and incoherent structures, all of which are important to large-aperture diode lasers. Although in 1990, at the time of the first special issue of JOSA B on this topic, most such studies were restricted to simple few-level models, more and more researchers are beginning to use models that describe semiconductor lasers more accurately. Furthermore, transverse-mode structures are generally coupled with the polarization of the laser field in the cavity. The issue of polarization has become especially relevant for VCSEL’s because of their unique geometry. Considerable attention has been paid over the past few years to understanding the polarization dynamics of VCSEL’s. Polarization fluctuations appear as interesting manifestations of quantum noise. There are also interesting recent observations of the spatial distribution of noise associated with the transverse modes of a VCSEL and nonclassical photon statistics linked to polarization anticorrelations. Finally, it has recently become possible to measure near-field profiles with a resolution of ~10 nm by use of a scanning near-field microscope. This newly acquired tool is likely to become important for beam diagnostics and for comparing simulation results with the experiments. It is these converging trends and exciting new developments that has led us to announce the joint special issue of OpEx and JOSA B on “Spatial and Polarization Dynamics of Semiconductor Lasers.”

The authors should consult OpticsNet (http://www.osa.org) or OpEx (http://www.opticsexpress.org) for further details about the format of each journal. We encourage authors to submit papers with color pictures and video animations to OpEx. Papers in the following areas are solicited:

  1. Transverse modes in new laser structures such as oxide-confined VCSEL’s, gain, index, or complex-guided lasers;
  2. Space-time-resolved modeling and simulations of large aperture, or broad waveguide, edge- and surface-emitting lasers;
  3. Experimental characterization of laser beams including near- and far-field measurements of edge- and surface-emitting lasers;
  4. Control of the beam profile and control of space-time chaos in broad-area lasers and laser arrays;
  5. Theory and model development for comprehensive space-time resolved modeling with electronic, thermal, and optical couplings;
  6. Polarization dynamics and polarization control in different VCSEL structures;
  7. Quantum noise, amplitude squeezing, polarization fluctuations and their relation to transverse modes;
  8. Localized structures in semiconductor devices.

Authors should submit papers to the journal that they deem most appropriate; the editors reserve the right to assign the papers to either journal. JOSA B papers should be identified as SPDSL feature issue papers and submitted to the Optical Society of America, Manuscript Office, 2010 Massachusetts Ave., N.W., Washington, D.C. 20036 or submitted electronically according to the instructions on OpticsNet (http://www.osa.org). Papers submitted to OpEx (http://www.opticsexpress.org) should be identified as SPDSL feature issue papers and should adhear to the OpEx style guide.

Cited By

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