Abstract

A metal electrode modification process for AlGaN-based metal-semiconductor-metal (MSM) photodetectors have been introduced to enhance the response of solar-blind ultraviolet (UV) light detection. The hexadecanethiol organic molecules are chemically adsorbed on the electrodes of high-Al-content Al0.6Ga0.4N MSM solar-blind UV photodetectors, which can reduce the work function of the metal electrode and change the height of the Schottky barrier. This modification process significantly increases the photocurrent and responsivity of the device compared with the referential photodetector without modification. Additionally, the adverse effects caused by the surface state and polarization of the AlGaN materials are effectively reduced, which can be beneficial for improving the electrical performances of III-nitride-based UV photodetectors.

© 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

1. Introduction

Ultraviolet (UV) optoelectronic devices have a broad application prospect, including missile early warning, environmental monitoring, flame detection, UV astronomy, biological and chemical process sensing and leak detection [16], which are becoming a new generation of optoelectronic equipment technology. III-nitride and III- oxides semiconductors are one of the highly anticipated candidate materials for UV photodetectors (PDs) due to their excellent optical and electrical properties [7,8], such as high electron saturation velocity, high breakdown field [9], high heat resistance, and high chemical stability [10]. Moreover, by increasing the proportion of Al content in AlGaN compounds, the band gap of AlxGa1-xN varies from 3.4 eV (GaN) to 6.2 eV (AlN), which will directly cause the cutoff wavelength of the device to vary from 365 nm to 200 nm [11]. Notably, AlGaN-based PDs with an Al-composition ratio greater than 40% are the appropriate candidates for solar-blind UV light detection, because their cut-off wavelength is less than 280 nm, which can effectively avoid the interference of solar background radiation.

So far, various AlGaN-based PD structures have been reported, such as p-n junction diodes, p-i-n diodes, metal-semiconductor-metal (MSM) and Schottky barrier diode structures [1215]. Among them, MSM AlGaN PDs exhibit great advantages: simple structure, easy to manufacture and high yield, low parasitic capacitance, no ohmic contact or unintentional doping, that is conducive to the manufacture of AlGaN solar-blind UV PDs [16]. However, there existing a large amount of electron trap states at the metal-semiconductor (MS) interface, and the crystal quality of the material will decrease as the Al composition increases [17]. The high dislocation density and point defects in AlGaN films with high Al-composition lead to non-uniform Schottky barriers [18,19], allowing carrier tunneling under reverse bias conditions (in the dark) [1821]. and would capture or recombine photogenerated carriers [22], resulting in a high reverse bias dark current. In addition, the gap state of the interface would capture or recombine photogenerated carriers [22], so the photocurrent will not be greatly enhanced under UV irradiation, which deteriorates the detection efficiency of AlGaN MSM UV PDs. In order to alleviate the adverse effects, different oxide layers such as SiO2, ZrO2, and HfO2 were inserted at the metal/semiconductor interfaces [2326]. Besides, it is fascinating that the adsorption of organic molecules can modify the surface state of III-nitride semiconductors. These organic molecules are different from inorganic semiconductors, which exhibits ideal occupied and unoccupied molecular orbital levels [27]. Theoretical and experimental researches have indicated that this method not only can reconstruct the surface, but also change the surface electrical properties without electron transfer between the molecule and the semiconductor. The band bending of Si and GaAs semiconductors were successfully adjusted by organic molecule modification [28,29]. Moreover, the Schottky barrier heights at metal/semiconductor interfaces were demonstrated to be modified by adsorption of organic molecules and reduce the reverse leakage current significantly [30]. Chemical self-assembly technology can conveniently and effectively utilize the characteristics of specific structural units (such as surface characteristics, charge, polarizability, dipoles, etc.) to modify or add required functions [31,32]. It is believed that the chemical modification technology can enhance the performance of semiconductor device.

Thereby, in order to improve the electrical characteristics of high-Al-composition Al0.6Ga0.4N solar-blind UV MSM PDs, we employed organic hexadecanethiol to modify the metal electrodes. It was demonstrated that hexadecanethiol was chemically adsorbed on the surface of the gold electrode to adjust its work function, thereby changing the Schottky barrier height of the solar-blind MSM PD. The enhanced photocurrent gain and responsivity were achieved by using hexadecanethiol modification, and the effect of organic molecular on enhanced performance for AlGaN MSM PDs was explored by energy band diagram.

2. Experimental details

Figure 1(a) shows the schematic structure of AlGaN solar-blind UV MSM PD with hexadecanethiol modification. The epitaxial structure was composed of an AIN buffer layer and an unintentionally doped AlGaN active layer on the sapphire substrate. The pressure in the chamber for AlGaN growth is maintained at 50 mbar, with the growth temperature of 1200°C, and V/III ratio of about 300. Ni (30 nm)/Au (100 nm) interdigital electrode structures were fabricated on AlGaN surface by using standard photolithography, thermal evaporation and lift-off processes. The interdigital electrode was composed of 21 electrode fingers with an effective area of 300×300 µm2, and the width and spacing of the interdigital electrodes were both 7µm, as shown in Fig. 1(b).

 figure: Fig. 1.

Fig. 1. (a) The schematic structure of the AlGaN MSM PD with hexadecanethiol modification. (b) Top-view photograph of the fabricated MSM PD. (c) Schematic illustration of hexadecanethiol organic molecules bonded to the metal electrode. (d) Chemical schematic of hexadecanethiol (C16H33SH).

Download Full Size | PPT Slide | PDF

Afterwards, the surface of the MSM PD’s interdigital electrodes was modified by hexadecanethiol, the chemical structure of which is shown in Fig. 1(d). The modification process was as following: before modification, the sample was thoroughly rinsed with acetone and isopropanol, then dried with deionized N2. The self-assembled molecule hexadecanethiol (CH3 (CH2) 15-SH) (Aldrich) was dissolved in ethanol with a concentration of (1∼3) × 10−3 M. The PD samples with gold electrodes were immersed in the solution for at least 48 hours to form a uniform and densely packed monolayer, as schematic illustrated in Fig. 1(c). After the self-assembly adsorption was completed, the samples were rinsed with toluene, acetone and ethanol, finally dried with a flow of deionized N2.

The AlGaN epitaxial film was characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The I-V characteristics of AlGaN solar-blind MSM PDs with and without electrode modification were measured by probe station with Keithley Semiconductor parameter analyzer (SCS-4200). The spectral responsivities of the two PDs were measured by using a monochromator fitted with a 500 W xenon lamp as the excitation source.

3. Result and discussion

Figure 2(a) shows Omega-2theta XRD pattern of the AlGaN (002) plane. Two diffraction peaks correspond to the AlN buffer layer and AlGaN epi-layer are observed. In addition, the crystal quality of the AlGaN epitaxial film can be characterized by the full width at half maximum (FWHM) of the XRD rocking curve, which is attributed to the fact that FWHM reflects the dislocation density of the material. The FWHM of the AlGaN (102) and (002) planes are 1106 and 837 arcsec, respectively, as shown in Fig. 2(b). A 10×10 µm2 AFM image of the AlGaN surface shown in Fig. 2(c) indicates that typical step-flow structures dominate the surface morphology, and the surface root-mean-square (RMS) roughness is 2.698 nm. Figures 2(d) and 2(f) show the dark field TEM images of AlGaN/AlN interfaces, which clearly exhibits the trend and position distribution of the dislocation line. By calculating the number of dislocation lines, it is estimated that the screw and edge dislocation densities of the AlGaN active layer are approximately 3.4×108 cm-2 and 1.19 × 109 cm-2, respectively.

 figure: Fig. 2.

Fig. 2. (a) Omega-2theta XRD pattern of the AlGaN (002) plane. (b) XRD rocking curves of AlGaN (002) and (102) planes. (c) 10×10 µm2 AFM image of AlGaN epitaxial layer. (d, e) TEM images of the AlGaN/AlN interface.

Download Full Size | PPT Slide | PDF

In order to investigate the effect of electrode modification on the current-voltage (I-V) characteristic of the AlGaN MSM PDs, Figs. 3(a) and 3(b) exhibit the dark currents and photocurrents of AlGaN MSM PDs with and without electrode modification. It is found that the dark currents (Id) of referential AlGaN MSM PD without modification are 4.95×10−11 A (−20 V) and 2.17×10−10 A (+20 V). While the Id of AlGaN MSM PD with electrode modified by hexadecanethiol are 3.59×10−10A (− 20 V) and 6.68×10−10A (+ 20 V). As for the photocurrents (Ip) of the two PDs illuminated by 225 nm monochromatic UV light, the referential device exhibits a photocurrent of 3.64×10−10A at −20 V and 9.68×10−10 A at +20 V, while the Ip of hexadecanethiol modified PD are 2.9×10−9A at −20 V and 8.18×10−9 A at +20 V, indicating an order of magnitude increasement compared to the referential PD. The increase of dark- and photo-current indicates that the Schottky barrier of the modified device is reduced, which proves that the electrode modification of the device is successful and effective. It is believed that the electron-hole pairs are generated in the depletion zone near the surface under UV illumination. Then the electrons are quickly swept out of the junction, but the holes are trapped and retained in the depletion zone. The trapped holes produce excess positive space-charge in the junction. The positive charge below the semiconductor surface is compensated by the negative surface charge, which further reduces the barrier height, thereby enhances the photocurrent [33]. After electrodes of the AlGaN MSM PD are modified by hexadecanethiol, although the dark current increases slightly, the photocurrent obtaines a higher gain effect compared to the referential PD. The high gain of photocurrent meets the demand for high response to weak UV detection. It is also worth noting that the breakdown voltage of the AlGaN PD increases slightly from 373 V to 377 V after electrode modification, as shown in Fig. 3(c).

 figure: Fig. 3.

Fig. 3. (a) Dark currents and (b) photocurrents of AlGaN MSM PDs with and without electrode modification. (c) Electrical breakdown characteristics of the two PDs.

Download Full Size | PPT Slide | PDF

Figure 4 shows the spectral responsivity of the two devices under different bias voltages. It can be seen that the PD devices with or without modification exhibit a steep cut-off effect at the wavelength of ∼250 nm, which agrees well with the band gap of AlxGa1-xN compound with an Al content of 0.6. Meanwhile, it can be clearly seen that from the overall trend of the response curves of 0-10 V, the order of magnitude of the spectral responsivity continues to rise under the bias voltage from low to high. The highest peak responsivity obtained at 10 V is 0.793A/W and 7.598A/W for PDs without and with hexadecanethiol modification, respectively, indicating approximately one order of magnitude of enhancement after electrode modification due to the enhanced internal gain of the modified device, and the internal gain may be mainly attributed to the trapping of carriers at the semiconductor/metal interface [3437]. In addition, as the reverse bias voltage continues to increase, the Schottky barrier would be significantly reduced by the image force effect [34]. Moreover, the electric field in the depletion region can be enhanced with the increase of the bias voltage, which reduces the height of the Schottky barrier and induces increased photocurrent.

 figure: Fig. 4.

Fig. 4. Spectral response of the AlGaN solar-blind MSM PD (a)without and (b)with electrode modification under different bias voltages.

Download Full Size | PPT Slide | PDF

Figure 5 shows schematic energy band diagrams of metal-AlGaN contacts without and with hexadecanethiol modification. The local surface state of AlGaN has a continuous energy distribution within the forbidden band and is inconsistent with the Fermi level. Thus a net charge will be generated on the surface, forming a surface potential ${V_s}$. It can be seen that when a metal with a higher work function is in contact with AlGaN, electrons will enter the metal from the semiconductor, forcing their Fermi levels to the same height. Because metal and AlGaN have different work functions, they form a parabolic barrier, which is called the Schottky barrier ${\phi _{Bn}}.$, the energy band diagram is reflected in Fig. 5(a) [3840]. The Schottky barrier measured relative to the Fermi level is given by:

$${\phi _{Bn}} = {\phi _m} - {\chi _s} - {V_s}{\phi _{Bn}} = {\phi _m} - {\chi _s}$$
where ${\phi _{Bn}}$ is the Schottky barrier height (SBH), ${\phi _m}$ is the work function of the metal, ${\chi _s}$ is the electron affinity of the semiconductor, and ${V_s}$ is the surface potential formed by the net charge. The change in the height of the Schottky barrier of the photodetector will significantly affect the photo-dark current, responsivity, and quantum efficiency. Obviously, the Schottky barrier height can be changed by adjusting the work function of the metal. The work function of metal can be regarded as a method for extending the wave function of free electrons on the metal surface into a vacuum. Exposing the metal to the electric field caused by the dipole monolayer causes the wave function of the free electrons to expand to a greater extent into the vacuum [41]. Therefore, electrons are more easily extracted from the metal, resulting in a decrease in the work function of the metal. As demonstrated above, one of the ways to tune the work function of metals is by inserting polar molecules that can self-assemble on the metal and form a highly ordered, thin layer with a dipole in the desired direction, which will cause the charge to redistribute on the metal surface. The effective dipole created by this self-assembled molecular (SAM) tunes the work function of the metal. The application of the dipole on the metal can be accomplished by physical or chemical methods of adsorbing molecules on the electrode surface. Alkane thiols are known to form such SAMs on metals. At the metal/molecular interfaces, the electric dipole associated with the gold-sulfur bond will change the work function of the metal electrode caused by the thiol-based monolayers. In this work, hexadecanethiol (C16H33SH) is chemically adsorbed to the gold electrode via the solution self-assembly phase to form a monolayer with dipoles. According to previous report, by changing the adsorption reaction time or the concentration of the configuration solution, the work function of the gold electrode can be varied from 5.1 eV to 4 eV [41]. The tunable work function of the metal electrode will cause the adjustment of the Schottky barrier, which in turn influences the performance of the AlGaN-based PDs. As displayed in Fig. 5(b), the work function of the metal decreases due to the adsorption of hexadecyl mercaptan, the barrier height generated by the metal-semiconductor contact will also decrease, which will allow more photogenerated carriers to pass through. Therefore, the enhancements of photocurrent and responsivity of the AlGaN solar-blind MSM PD are obtained with electrode modification.

 figure: Fig. 5.

Fig. 5. Schematic energy band diagrams of metal-AlGaN contact, and (b) metal-AlGaN with hexadecanethiol modified on the metal surface.

Download Full Size | PPT Slide | PDF

Finally, I-V characteristics in dark as a function of temperature for the solar-blind AlGaN MSM PD with hexadecanethiol modification is shown in Fig. 6. It is found that the dark currents increase with the temperature increased from 300 K to 370 K. Moreover, the dark current shows a significant exponential increase under the bias voltage below 4 V, indicating that the current has a strong dependence on the bias voltage in the low field state. Therefore, thermionic-field emission (TFE) is believed to be dominant at the low bias voltage [42], and the current on the Schottky contact in the MSM PD is limited by the thermally assisted tunneling of electrons from the metal to the semiconductor conduction band at low bias voltages. However, when the applied bias voltage is higher than 8 V, the dark current exhibits a slight linear increase under high voltages, indicating a Poole-Frenkel emission (PFE) for carriers transport from the trap state in the semiconductor body to the continuous conduction state [43]. The results demonstrate that the solar-blind AlGaN MSM PDs with electrode modification are promising for high-temperature application.

 figure: Fig. 6.

Fig. 6. I-V characteristics of Al0.6Ga0.4N MSM PD under dark conditions at different temperatures from 300 to 370 K.

Download Full Size | PPT Slide | PDF

4. Conclusion

In summary, we propose a high-Al-composition Al0.6Ga0.4N solar-blind MSM PD with electrode modification by using hexadecanethiol. The modified AlGaN MSM PD exhibits a solar-blind photo-response with the cut-off wavelength located at ∼250 nm, and a high peak responsivity of 7.598A/W at 10 V. More importantly, the electrical performance of the AlGaN PD with modification is obviously enhanced compared to the referential device without modification, which is due to the reduced Schottky barrier height caused by hexadecanethiol modification. The underlying mechanism has been explored by the energy band diagrams of metal-AlGaN contact with hexadecanethiol modified on the metal surface. In addition, the I-V curves measured from room temperature to 370 K indicate that the solar-blind AlGaN MSM PDs with electrode modification are potential for high-temperature UV detection applications.

Funding

National Natural Science Foundation of China (61974056); Jiangsu Provincial Key Research and Development Program (BE2020756); Natural Science Foundation of Jiangsu Province (BK20190576); Science and Technology Development Foundation of Wuxi (N20191002); State Key Laboratory of Food Science and Technology (JUFSTR20180302); Fundamental Research Funds for the Central Universities (JUSRP22032); Postgraduate Research & Practice Innovation Program of Jiangsu Province (KYCY20_1769).

Disclosures

The authors declare no conflicts of interest.

References

1. D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

2. Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020). [CrossRef]  

3. D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020). [CrossRef]  

4. D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

5. M. Shur, “Wide band gap semiconductor technology: State-of-the-art,” Solid-State Electron. 155, 65–75 (2019). [CrossRef]  

6. C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020). [CrossRef]  

7. D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019). [CrossRef]  

8. C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020). [CrossRef]  

9. S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013). [CrossRef]  

10. F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012). [CrossRef]  

11. I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997). [CrossRef]  

12. X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015). [CrossRef]  

13. W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017). [CrossRef]  

14. D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018). [CrossRef]  

15. A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019). [CrossRef]  

16. S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018). [CrossRef]  

17. H. Yu, Z. Ren, H. Zhang, J. Dai, and H. Sun, “Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier,” Opt. Express 27(20), A1544 (2019). [CrossRef]  

18. A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012). [CrossRef]  

19. A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013). [CrossRef]  

20. C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015). [CrossRef]  

21. S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018). [CrossRef]  

22. L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017). [CrossRef]  

23. P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008). [CrossRef]  

24. C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011). [CrossRef]  

25. C.-H. Chen, “GaN-based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators,” Jap,” J. Appl. Phys. 52(8S), 08JF08 (2013). [CrossRef]  

26. H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019). [CrossRef]  

27. N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993). [CrossRef]  

28. T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011). [CrossRef]  

29. A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000). [CrossRef]  

30. Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001). [CrossRef]  

31. Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003). [CrossRef]  

32. R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004). [CrossRef]  

33. M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019). [CrossRef]  

34. F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011). [CrossRef]  

35. E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997). [CrossRef]  

36. E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999). [CrossRef]  

37. H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011). [CrossRef]  

38. S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000). [CrossRef]  

39. A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014). [CrossRef]  

40. B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010). [CrossRef]  

41. K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007). [CrossRef]  

42. C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969). [CrossRef]  

43. E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009). [CrossRef]  

References

  • View by:

  1. D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).
  2. Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
    [Crossref]
  3. D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
    [Crossref]
  4. D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).
  5. M. Shur, “Wide band gap semiconductor technology: State-of-the-art,” Solid-State Electron. 155, 65–75 (2019).
    [Crossref]
  6. C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
    [Crossref]
  7. D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
    [Crossref]
  8. C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
    [Crossref]
  9. S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013).
    [Crossref]
  10. F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
    [Crossref]
  11. I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
    [Crossref]
  12. X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
    [Crossref]
  13. W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
    [Crossref]
  14. D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
    [Crossref]
  15. A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
    [Crossref]
  16. S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
    [Crossref]
  17. H. Yu, Z. Ren, H. Zhang, J. Dai, and H. Sun, “Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier,” Opt. Express 27(20), A1544 (2019).
    [Crossref]
  18. A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
    [Crossref]
  19. A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
    [Crossref]
  20. C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
    [Crossref]
  21. S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
    [Crossref]
  22. L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
    [Crossref]
  23. P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
    [Crossref]
  24. C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
    [Crossref]
  25. C.-H. Chen, “GaN-based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators,” Jap,” J. Appl. Phys. 52(8S), 08JF08 (2013).
    [Crossref]
  26. H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
    [Crossref]
  27. N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
    [Crossref]
  28. T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
    [Crossref]
  29. A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
    [Crossref]
  30. Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001).
    [Crossref]
  31. Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
    [Crossref]
  32. R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
    [Crossref]
  33. M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
    [Crossref]
  34. F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
    [Crossref]
  35. E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
    [Crossref]
  36. E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
    [Crossref]
  37. H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
    [Crossref]
  38. S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
    [Crossref]
  39. A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
    [Crossref]
  40. B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
    [Crossref]
  41. K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
    [Crossref]
  42. C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969).
    [Crossref]
  43. E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
    [Crossref]

2020 (4)

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
[Crossref]

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

2019 (6)

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

M. Shur, “Wide band gap semiconductor technology: State-of-the-art,” Solid-State Electron. 155, 65–75 (2019).
[Crossref]

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

H. Yu, Z. Ren, H. Zhang, J. Dai, and H. Sun, “Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier,” Opt. Express 27(20), A1544 (2019).
[Crossref]

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

2018 (3)

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

2017 (2)

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

2015 (2)

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

2014 (1)

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

2013 (3)

A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
[Crossref]

S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013).
[Crossref]

C.-H. Chen, “GaN-based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators,” Jap,” J. Appl. Phys. 52(8S), 08JF08 (2013).
[Crossref]

2012 (2)

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

2011 (4)

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

2010 (1)

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

2009 (1)

E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
[Crossref]

2008 (1)

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

2007 (1)

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

2004 (1)

R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
[Crossref]

2003 (1)

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

2001 (1)

Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001).
[Crossref]

2000 (2)

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
[Crossref]

1999 (1)

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

1997 (2)

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

1993 (1)

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

1969 (1)

C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969).
[Crossref]

Abarkan, M.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Aggarwal, N.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Agrawal, M.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Ahaitouf, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Ang, K. S.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Aqua, T.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Arslan, E.

E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
[Crossref]

Arulkumaran, S.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Asadi, K.

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

Asokan, K.

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

Assouar, B.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Awaji, H.

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Beaumont, B.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Bendikov, T.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Blom, P. W. M.

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

Brendel, M.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Brunner, F.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Bruno, A.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Butun, S.

E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
[Crossref]

Cahen, D.

Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001).
[Crossref]

A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
[Crossref]

Calle, F.

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

Calleja, E.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Chang, P. C.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Chang, S. J.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Chang, S.-J.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Chang, S.-P.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Chen, C. H.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Chen, C.-H.

C.-H. Chen, “GaN-based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators,” Jap,” J. Appl. Phys. 52(8S), 08JF08 (2013).
[Crossref]

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

Chen, D.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Chen, K.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Chen, K. J.

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

Chen, L.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Chen, Y.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Chen, Z. W.

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Cheng, C.-F.

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

Chiou, Y.-Z.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Cohen, H.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Crowell, C. R.

C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969).
[Crossref]

Dai, J.

de Boer, B.

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

Dharmarasu, N.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Dinsmore, A. D.

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Egawa, T.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Emrick, T.

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Fang, S.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

Feng, Z. C.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Ferguson, I.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Frydman, V.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Garg, M.

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

Garrido, J. A.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Gautier, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Ge, B. H.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Gholamrezaie, F.

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

Gibart, P.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Gu, X.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Guo, C.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Guo, D. Y.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Guo, Q. X.

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Gupta, G.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Gupta, V.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Hagedorn, S.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Hamady, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Han, P.

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

He, C. R.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

He, J.-H.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

Hod, O.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Huang, C.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
[Crossref]

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Hung, C.-C.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Husale, S.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Ishikawa, H.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Izpura, I.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Jain, S. K.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Jena, D.

S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013).
[Crossref]

Ji, X.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

Jiang, H.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Jiang, K.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Jimbo, T.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Joseph, C.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Kalra, A.

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

Kang, Y.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Karlicek, R. F.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Kaur, R.

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

Kobayashi, N.

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Krepel, D.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Krishna, S.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Kronik, L.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Kumar, A.

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
[Crossref]

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

Kumar, M.

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

Kumar, R.

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

Kumar, V.

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

Lai, W.-C.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Lam, K. T.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Lewis, P. A.

R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
[Crossref]

Li, B. K.

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

Li, C. R.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Li, D.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Li, L.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

Li, P. G.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Li, Z.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Liang, S.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Lihuang, T.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Lin, Y.

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Lin, Y. J.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Liu, A. P.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Liu, C. H.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Liu, X.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

Liu, Z. H.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Liu, Z. L.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

Long, R.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Long, S.

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Long, S. B.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

Lu, H.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Lu, Y.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Ma, H.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Mi, Z. T.

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Miao, G.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Mitra, S.

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Mizunuma, S.

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Monroy, E.

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Mou, W.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Moudakir, T.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Munoz, E.

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Muralidharan, R.

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

Naaman, R.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Nath, D. N.

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

Nevin, W. A.

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Ng, T. K.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Omnes, F.

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

Ooi, B. S.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

Ougazzaden, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Ozbay, E.

E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
[Crossref]

Radhakrishnan, K.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Raghavan, S.

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

Rajan, S.

S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013).
[Crossref]

Rao, V. R.

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

Rathkanthiwar, S.

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

Ravikiran, L.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Ren, Z.

Ren, Z. J.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

Rideout, V. L.

C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969).
[Crossref]

Russell, T. P.

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Salvestrini, J. P.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Sanchez, F. J.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

SanchezGarcia, M. A.

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

Selzer, Y.

Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001).
[Crossref]

Shanzer, A.

A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
[Crossref]

Shur, M.

M. Shur, “Wide band gap semiconductor technology: State-of-the-art,” Solid-State Electron. 155, 65–75 (2019).
[Crossref]

Sinai, O.

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

Singh, R.

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
[Crossref]

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

Skaff, H.

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Smith, R. K.

R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
[Crossref]

Smits, E. C. P.

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

Soci, C.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Song, H.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Srour, H.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Stall, R.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Subedi, R. C.

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Sun, H.

C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
[Crossref]

H. Yu, Z. Ren, H. Zhang, J. Dai, and H. Sun, “Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier,” Opt. Express 27(20), A1544 (2019).
[Crossref]

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Sun, H. D.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Sun, X.

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Tak, B. R.

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

Tan, C. K.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Tang, W. H.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Tran, C. A.

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Tsai, S.-Y.

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

Tsai, Y.-H.

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

Umeno, M.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Vilan, A.

A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
[Crossref]

Vinayak, S.

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
[Crossref]

Walde, S.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Wang, C.-K.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Wang, D. H.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Wang, J. N.

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

Wang, M. J.

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

Wang, S. L.

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

Wang, Z.

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

Weiss, P. S.

R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
[Crossref]

Weyers, M.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Wu, C.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

Wu, F. M.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Wu, Z. P.

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

Xie, F.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Xing, C.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

Xiong, Y. J.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Xiu, X.

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Yamaguchi, M.

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Yan, D.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Yan, F.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

Yang, G.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Yen, C.-H.

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

Yu, C. L.

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

Yu, H.

Yu, H. B.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Yue, Y.

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Zeimer, U.

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

Zhang, F. B.

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

Zhang, H.

C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
[Crossref]

H. Yu, Z. Ren, H. Zhang, J. Dai, and H. Sun, “Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier,” Opt. Express 27(20), A1544 (2019).
[Crossref]

Zhang, H. C.

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Zhang, R.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Zhang, Y.

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Zhang, Z.

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Zhao, G. Y.

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

Zhao, L.

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

Zheng, Y.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

Zhou, J.

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

Adv. Funct. Mater. (1)

H. Sun, S. Mitra, R. C. Subedi, Y. Zhang, and S. Long, “Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate,” Adv. Funct. Mater. 29(48), 1905445 (2019).
[Crossref]

Adv. Mater. (1)

Y. Selzer and D. Cahen, “Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers,” Adv. Mater. 13(7), 508–511 (2001).
[Crossref]

Adv. Opt. Photonics (1)

D. Li, K. Jiang, X. Sun, and C. Guo, “AlGaN photonics: recent advances in materials and ultraviolet devices,” Adv. Opt. Photonics 10(1), 43–110 (2018).
[Crossref]

Appl. Phys. Lett. (4)

E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. SanchezGarcia, E. Calleja, B. Beaumont, and P. Gibart, “Photoconductor gain mechanisms in GaN ultraviolet detectors,” Appl. Phys. Lett. 71(7), 870–872 (1997).
[Crossref]

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

A. Kumar, M. Kumar, R. Kaur, S. Vinayak, and R. Singh, “Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme,” Appl. Phys. Lett. 104(13), 133510 (2014).
[Crossref]

E. Arslan, S. Butun, and E. Ozbay, “Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures,” Appl. Phys. Lett. 94(14), 142106 (2009).
[Crossref]

Chem. Phys. Lett. (1)

N. Kobayashi, W. A. Nevin, S. Mizunuma, H. Awaji, and M. Yamaguchi, “Ring-Expanded Porphyrins as an Approach Towards Highly Conductive Molecular Semiconductors,” Chem. Phys. Lett. 205(1), 51–54 (1993).
[Crossref]

Curr. Appl. Phys. (1)

A. Kumar, S. Vinayak, and R. Singh, “Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,” Curr. Appl. Phys. 13(6), 1137–1142 (2013).
[Crossref]

IEEE Photonics Technol. Lett. (1)

A. Kalra, S. Rathkanthiwar, R. Muralidharan, S. Raghavan, and D. N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency,” IEEE Photonics Technol. Lett. 31(15), 1237–1240 (2019).
[Crossref]

IEEE Sens. J. (3)

F. Xie, H. Lu, D. Chen, X. Ji, F. Yan, R. Zhang, Y. Zheng, L. Li, and J. Zhou, “Ultra-low dark current AlGaN-based solar-blind metal-semiconductor-metal photodetectors for high-temperature applications,” IEEE Sens. J. 12(6), 2086–2090 (2012).
[Crossref]

C.-K. Wang, Y.-Z. Chiou, S.-J. Chang, W.-C. Lai, S.-P. Chang, C.-H. Yen, and C.-C. Hung, “GaN MSM UV photodetector with sputtered AlN nucleation layer,” IEEE Sens. J. 15(9), 4743–4748 (2015).
[Crossref]

L. Ravikiran, K. Radhakrishnan, N. Dharmarasu, M. Agrawal, Z. Wang, A. Bruno, C. Soci, T. Lihuang, and K. S. Ang, “GaN Schottky metal-semiconductor-metal UV photodetectors on Si(111) grown by ammonia-MBE,” IEEE Sens. J. 17(1), 72–77 (2017).
[Crossref]

IEEE Trans. Electron Devices (1)

M. Garg, B. R. Tak, V. R. Rao, and R. Singh, “Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules,” IEEE Trans. Electron Devices 66(4), 2036–2039 (2019).
[Crossref]

IET Optoelectron. (1)

P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu, and C. H. Liu, “AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,” IET Optoelectron. 2(1), 55–57 (2008).
[Crossref]

J. Appl. Phys. (5)

C.-H. Chen, Y.-H. Tsai, S.-Y. Tsai, and C.-F. Cheng, “GaN-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer,” J. Appl. Phys. 50(4), 04DG19 (2011).
[Crossref]

C.-H. Chen, “GaN-based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators,” Jap,” J. Appl. Phys. 52(8S), 08JF08 (2013).
[Crossref]

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, and M. Weyers, “Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors,” J. Appl. Phys. 123(16), 161551 (2018).
[Crossref]

A. Kumar, K. Asokan, V. Kumar, and R. Singh, “Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode,” J. Appl. Phys. 112(2), 024507 (2012).
[Crossref]

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, and M. Umeno, “Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N,” Jap,” J. Appl. Phys. 39(Part 2, No. 4B), L351–L353 (2000).
[Crossref]

J. Mater. Chem. (1)

K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, and B. de Boer, “Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols,” J. Mater. Chem. 17(19), 1947–1953 (2007).
[Crossref]

J. Mater. Sci.: Mater. Electron. (1)

S. K. Jain, N. Aggarwal, S. Krishna, R. Kumar, S. Husale, V. Gupta, and G. Gupta, “GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity,” J. Mater. Sci.: Mater. Electron. 29(11), 8958–8963 (2018).
[Crossref]

J. Phys. Chem. C (1)

T. Aqua, H. Cohen, O. Sinai, V. Frydman, T. Bendikov, D. Krepel, O. Hod, L. Kronik, and R. Naaman, “Role of backbone charge rearrangement in the bond-dipole and work function of molecular monolayers,” J. Phys. Chem. C 115(50), 24888–24892 (2011).
[Crossref]

J. Phys. D: Appl. Phys. (1)

Z. J. Ren, H. B. Yu, Z. L. Liu, D. H. Wang, C. Xing, H. C. Zhang, C. Huang, S. B. Long, and H. D. Sun, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review,” J. Phys. D: Appl. Phys. 53(7), 073002 (2020).
[Crossref]

Mater. Sci. Eng., B (1)

I. Ferguson, C. A. Tran, R. F. Karlicek, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, “GaN and AlGaN metal-semiconductor-metal photodetectors,” Mater. Sci. Eng., B 50(1-3), 311–314 (1997).
[Crossref]

Mater. Today Phys. (2)

D. Y. Guo, Q. X. Guo, Z. W. Chen, Z. P. Wu, P. G. Li, and W. H. Tang, “Review of Ga2O3-based optoelectronic devices,” Mater. Today Phys. 11, 100157 (2019).
[Crossref]

C. Wu, C. R. He, D. Y. Guo, F. B. Zhang, P. G. Li, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Vertical alpha/beta-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors,” Mater. Today Phys. 12, 100193 (2020).
[Crossref]

Nano Energy (1)

C. Huang, H. Zhang, and H. Sun, “Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system,” Nano Energy 77, 105149 (2020).
[Crossref]

Nature (1)

A. Vilan, A. Shanzer, and D. Cahen, “Molecular control over Au/GaAs diodes,” Nature 404(6774), 166–168 (2000).
[Crossref]

Opt. Express (1)

Phys. Rev. Appl. (1)

D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on alpha/beta phase junction of Ga2O3,” Phys. Rev. Appl. 13(2), 024051 (2020).
[Crossref]

Phys. Status Solidi A (1)

E. Monroy, F. Calle, E. Munoz, and F. Omnes, “Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes,” Phys. Status Solidi A 176(1), 157–161 (1999).
[Crossref]

Phys. Status Solidi C (1)

B. K. Li, M. J. Wang, K. J. Chen, and J. N. Wang, “Electroluminescence from a forward biased Ni/Au-AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface,” Phys. Status Solidi C 7(7-8), 1961–1963 (2010).
[Crossref]

Prog. Surf. Sci. (1)

R. K. Smith, P. A. Lewis, and P. S. Weiss, “Patterning self-assembled monolayers,” Prog. Surf. Sci. 75(1-2), 1–68 (2004).
[Crossref]

Sci. Rep. (1)

X. Sun, D. Li, Z. Li, H. Song, H. Jiang, Y. Chen, G. Miao, and Z. Zhang, “High spectral response of self-driven GaN-based detectors by controlling the contact barrier height,” Sci. Rep. 5(1), 16819 (2015).
[Crossref]

Science (1)

Y. Lin, H. Skaff, T. Emrick, A. D. Dinsmore, and T. P. Russell, “Nanoparticle assembly and transport at liquid-liquid interfaces,” Science 299(5604), 226–229 (2003).
[Crossref]

Semicond. Sci. Technol. (1)

S. Rajan and D. Jena, “Gallium nitride electronics PREFACE,” Semicond. Sci. Technol. 28(7), 070301 (2013).
[Crossref]

Solid-State Electron. (4)

W. Mou, L. Zhao, L. Chen, D. Yan, H. Ma, G. Yang, and X. Gu, “GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates,” Solid-State Electron. 133, 78–82 (2017).
[Crossref]

M. Shur, “Wide band gap semiconductor technology: State-of-the-art,” Solid-State Electron. 155, 65–75 (2019).
[Crossref]

F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate,” Solid-State Electron. 57(1), 39–42 (2011).
[Crossref]

C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-State Electron. 12(2), 89–105 (1969).
[Crossref]

Other (2)

D. H. Wang, C. Huang, X. Liu, H. C. Zhang, H. B. Yu, S. Fang, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “Highly uniform, self-assembled AlGaN nanowires for self-powered solar-blind photodetector with fast-response speed and high responsivity,” Adv. Opt. Mater. 2000893, 2020. (to be published).

D. H. Wang, X. Liu, S. Fang, C. Huang, Y. Kang, H. B. Yu, Z. H. Liu, H. C. Zhang, R. Long, Y. J. Xiong, Y. J. Lin, Y. Yue, B. H. Ge, T. K. Ng, B. S. Ooi, Z. T. Mi, J.-H. He, and H. D. Sun, “AlGaN/Pt nanoarchitecture: toward high responsivity, self powered ultraviolet-sensitive photodetection,” Nano Lett. 0c03357, 2020. (to be published).

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1.
Fig. 1. (a) The schematic structure of the AlGaN MSM PD with hexadecanethiol modification. (b) Top-view photograph of the fabricated MSM PD. (c) Schematic illustration of hexadecanethiol organic molecules bonded to the metal electrode. (d) Chemical schematic of hexadecanethiol (C16H33SH).
Fig. 2.
Fig. 2. (a) Omega-2theta XRD pattern of the AlGaN (002) plane. (b) XRD rocking curves of AlGaN (002) and (102) planes. (c) 10×10 µm2 AFM image of AlGaN epitaxial layer. (d, e) TEM images of the AlGaN/AlN interface.
Fig. 3.
Fig. 3. (a) Dark currents and (b) photocurrents of AlGaN MSM PDs with and without electrode modification. (c) Electrical breakdown characteristics of the two PDs.
Fig. 4.
Fig. 4. Spectral response of the AlGaN solar-blind MSM PD (a)without and (b)with electrode modification under different bias voltages.
Fig. 5.
Fig. 5. Schematic energy band diagrams of metal-AlGaN contact, and (b) metal-AlGaN with hexadecanethiol modified on the metal surface.
Fig. 6.
Fig. 6. I-V characteristics of Al0.6Ga0.4N MSM PD under dark conditions at different temperatures from 300 to 370 K.

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

ϕ B n = ϕ m χ s V s ϕ B n = ϕ m χ s

Metrics