T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
S. H. Chao, L. H. Yeh, R. T. Wu, K. Kawagishi, and S. C. Hsu, “Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes,” RSC Adv. 10(28), 16284–16290 (2020).
[Crossref]
R. K. Mondal, V. Chatterjee, S. Prasad, and S. Pal, “Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer,” Semicond. Sci. Technol. 35(5), 055031 (2020).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]
H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
H. Hirayama, S. Fujikawa, and N. Kamata, “Recent progress in AlGaN-based deep-UV LEDs,” Electron Comm Jpn 98(5), 1–8 (2015).
[Crossref]
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light- emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100209 (2014).
[Crossref]
H. Inagaki, A. Saito, H. Sugiyama, T. Okabayashi, and S. Fujimoto, “Rapid inactivation of SARS-CoV-2 with Deep-UV LED irradiation,” Emerging Microbes Infect. 9(1), 1744–1747 (2020).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
H. Wan, S. Zhou, S. Lan, and C. Gui, “Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes,” ECS J. Solid State Sci. Technol. 9(4), 046002 (2020).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
N. Maeda, J. Yun, M. Jo, and H. Hirayama, “Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes,” Jpn. J. Appl. Phys. 57(4S), 04FH08 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes,” Phys. Status Solidi A 215(8), 1700435 (2018).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector,” Phys. Status Solidi A 215(8), 1700436 (2018).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Hirayama, S. Fujikawa, and N. Kamata, “Recent progress in AlGaN-based deep-UV LEDs,” Electron Comm Jpn 98(5), 1–8 (2015).
[Crossref]
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light- emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100209 (2014).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
S. H. Chao, L. H. Yeh, R. T. Wu, K. Kawagishi, and S. C. Hsu, “Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes,” RSC Adv. 10(28), 16284–16290 (2020).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
H. Inagaki, A. Saito, H. Sugiyama, T. Okabayashi, and S. Fujimoto, “Rapid inactivation of SARS-CoV-2 with Deep-UV LED irradiation,” Emerging Microbes Infect. 9(1), 1744–1747 (2020).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector,” Phys. Status Solidi A 215(8), 1700436 (2018).
[Crossref]
N. Maeda, J. Yun, M. Jo, and H. Hirayama, “Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes,” Jpn. J. Appl. Phys. 57(4S), 04FH08 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes,” Phys. Status Solidi A 215(8), 1700435 (2018).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Hirayama, S. Fujikawa, and N. Kamata, “Recent progress in AlGaN-based deep-UV LEDs,” Electron Comm Jpn 98(5), 1–8 (2015).
[Crossref]
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light- emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100209 (2014).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
S. H. Chao, L. H. Yeh, R. T. Wu, K. Kawagishi, and S. C. Hsu, “Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes,” RSC Adv. 10(28), 16284–16290 (2020).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
M. Kneissl, III-Nitride Ultraviolet Emitters: Technology and Applications (Springer, 2016), Chap. 1.
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
H. Wan, S. Zhou, S. Lan, and C. Gui, “Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes,” ECS J. Solid State Sci. Technol. 9(4), 046002 (2020).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector,” Phys. Status Solidi A 215(8), 1700436 (2018).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
N. Maeda, M. Jo, and H. Hirayama, “Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes,” Phys. Status Solidi A 215(8), 1700435 (2018).
[Crossref]
N. Maeda, J. Yun, M. Jo, and H. Hirayama, “Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes,” Jpn. J. Appl. Phys. 57(4S), 04FH08 (2018).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light- emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100209 (2014).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
R. K. Mondal, V. Chatterjee, S. Prasad, and S. Pal, “Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer,” Semicond. Sci. Technol. 35(5), 055031 (2020).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Inagaki, A. Saito, H. Sugiyama, T. Okabayashi, and S. Fujimoto, “Rapid inactivation of SARS-CoV-2 with Deep-UV LED irradiation,” Emerging Microbes Infect. 9(1), 1744–1747 (2020).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
R. K. Mondal, V. Chatterjee, S. Prasad, and S. Pal, “Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer,” Semicond. Sci. Technol. 35(5), 055031 (2020).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
S. Oh, K. J. Lee, S. J. Kim, K. Ha, J. Jeong, D. Kim, K. K. Kim, and S. J. Park, “Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters,” Nanoscale 9(22), 7625–7630 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
R. K. Mondal, V. Chatterjee, S. Prasad, and S. Pal, “Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer,” Semicond. Sci. Technol. 35(5), 055031 (2020).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]
H. Inagaki, A. Saito, H. Sugiyama, T. Okabayashi, and S. Fujimoto, “Rapid inactivation of SARS-CoV-2 with Deep-UV LED irradiation,” Emerging Microbes Infect. 9(1), 1744–1747 (2020).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. 71(18), 2572–2574 (1997).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
H. Inagaki, A. Saito, H. Sugiyama, T. Okabayashi, and S. Fujimoto, “Rapid inactivation of SARS-CoV-2 with Deep-UV LED irradiation,” Emerging Microbes Infect. 9(1), 1744–1747 (2020).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
T. Nakashima, K. Takeda, H. Shinzato, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H. Amano, “Combination of indium-tin oxide and SiO2/AlN dielectric multilayer reflective electrodes for ultraviolet-light-emitting diodes,” Jpn. J. Appl. Phys. 52(8S), 08JG07 (2013).
[Crossref]
Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, and H. Hirayama, “High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer,” Appl. Phys. Express 11(1), 012101 (2018).
[Crossref]
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, “Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light- emitting diodes,” Jpn. J. Appl. Phys. 53(10), 100209 (2014).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10(3), 031002 (2017).
[Crossref]
H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata, “Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer,” Conf. Dig. - IEEE Int. Semicond. Laser Conf. 91(6), 7–8 (2016).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
H. Wan, S. Zhou, S. Lan, and C. Gui, “Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes,” ECS J. Solid State Sci. Technol. 9(4), 046002 (2020).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneissl, “Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes,” Appl. Phys. Lett. 107(14), 142101 (2015).
[Crossref]
N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl, “Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector,” Appl. Phys. Lett. 96(8), 081109 (2010).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
S. H. Chao, L. H. Yeh, R. T. Wu, K. Kawagishi, and S. C. Hsu, “Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes,” RSC Adv. 10(28), 16284–16290 (2020).
[Crossref]
Z. Bryan, I. Bryan, J. Xie, S. Mita, Z. Sitar, and R. Collazo, “High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates,” Appl. Phys. Lett. 106(14), 142107 (2015).
[Crossref]
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
S. H. Chao, L. H. Yeh, R. T. Wu, K. Kawagishi, and S. C. Hsu, “Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes,” RSC Adv. 10(28), 16284–16290 (2020).
[Crossref]
D. Lee, J. W. Lee, J. Jang, I. S. Shin, L. Jin, J. H. Park, J. Kim, J. Lee, H. S. Noh, Y. Il Kim, Y. Park, G. Do Lee, Y. Park, J. K. Kim, and E. Yoon, “Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates,” Appl. Phys. Lett. 110(19), 191103 (2017).
[Crossref]
H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi A 206(6), 1199–1204 (2009).
[Crossref]
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, and T. Jimbo, “Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method,” Appl. Phys. Lett. 70(24), 3209–3211 (1997).
[Crossref]
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]
N. Maeda, J. Yun, M. Jo, and H. Hirayama, “Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes,” Jpn. J. Appl. Phys. 57(4S), 04FH08 (2018).
[Crossref]
C. Liu, Y. K. Ooi, S. M. Islam, H. G. Xing, D. Jena, and J. Zhang, “234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes,” Appl. Phys. Lett. 112(1), 011101 (2018).
[Crossref]
H. Long, S. Wang, J. Dai, F. Wu, J. Zhang, J. Chen, R. Liang, Z. C. Feng, and C. Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD,” Opt. Express 26(2), 680 (2018).
[Crossref]
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]
S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H. C. Kuo, and C. Chen, “Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure,” ACS Photonics 5(9), 3534–3540 (2018).
[Crossref]
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, and J. Li, “Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method,” 2016 Int. Forum Wide Bandgap Semicond. China, IFWS 2016 - Conf. Proc. 127–130 (2017).
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]
H. Wan, S. Zhou, S. Lan, and C. Gui, “Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes,” ECS J. Solid State Sci. Technol. 9(4), 046002 (2020).
[Crossref]
W. Chen, Y. Zhou, X. Yu, Z. Xie, R. Zhang, and Y. Zheng, “The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs,” IEEE Trans. Electron Devices 65(9), 3803–3808 (2018).
[Crossref]