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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11(3), 034103 (2018).
[Crossref]
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[Crossref]
G. Muziol, H. Turski, M. Siekacz, S. Grzanka, P. Perlin, and C. Skierbiszewski, “Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide,” Appl. Phys. Express 9(9), 092103 (2016).
[Crossref]
G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, E. Grzanka, P. Perlin, and C. Skierbiszewski, “Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 8(3), 032103 (2015).
[Crossref]
C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D: Appl. Phys. 47(7), 073001 (2014).
[Crossref]
M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski, “Tunnel junctions with doped InGaN quantum well for vertical integration of III-nitride optoelectronic devices,” submitted (2020).
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[Crossref]
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[Crossref]
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Vélez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9(6), 061004 (2016).
[Crossref]
M. Malinverni, J.-M. Lamy, D. Martin, E. Feltin, J. Dorsaz, A. Castiglia, M. Rossetti, M. Duelk, C. Vélez, and N. Grandjean, “Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes,” Appl. Phys. Lett. 105(24), 241103 (2014).
[Crossref]
C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z. R. Wasilewski, and S. Porowski, “Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy,” J. Phys. D: Appl. Phys. 47(7), 073001 (2014).
[Crossref]
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[Crossref]
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