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[Crossref]
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[Crossref]
D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
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[Crossref]
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[Crossref]
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[Crossref]
D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, and M. Razeghi, “Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN,” Appl. Phys. Lett. 91(7), 071120 (2007).
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
J. Park, K. M. Song, S. R. Jeon, J. H. Baek, and S. W. Ryu, “Doping selective lateral electrochemical etching of GaN for chemical lift-off,” Appl. Phys. Lett. 94(22), 221907 (2009).
[Crossref]
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[Crossref]
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