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Y. Fu, D. Kim, W. Jiang, W. Yin, T. K. Ahn, and H. Chae, “Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots,” RSC Adv. 7(65), 40866–40872 (2017).
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H. Zheng, Y. Zheng, N. Liu, N. Ai, Q. Wang, S. Wu, J. Zhou, D. Hu, S. Yu, and S. Han, “All-solution processed polymer light-emitting diode displays,” Nat. Commun. 4(1), 1971 (2013).
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T.-H. Kim, K.-S. Cho, E. K. Lee, S. J. Lee, J. Chae, J. W. Kim, D. H. Kim, J.-Y. Kwon, G. Amaratunga, and S. Y. Lee, “Full-colour quantum dot displays fabricated by transfer printing,” Nat. Photonics 5(3), 176–182 (2011).
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J. Lim, M. Park, W. K. Bae, D. Lee, S. Lee, C. Lee, and K. Char, “Highly Efficient Cadmium-Free Quantum Dot Light-Emitting Diodes Enabled by the Direct Formation of Excitons within InP@ZnSeS Quantum Dots,” ACS Nano 7(10), 9019–9026 (2013).
[Crossref]
J. Kwak, W. K. Bae, D. Lee, I. Park, J. Lim, M. Park, H. Cho, H. Woo, D. Y. Yoon, K. Char, S. Lee, and C. Lee, “Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure,” Nano Lett. 12(5), 2362–2366 (2012).
[Crossref]
W. Jiang, H. Xu, X. Ban, G. Yuan, Y. Sun, B. Huang, L. Duan, and Y. Qiu, “Alcohol-Soluble Electron-Transport Small Molecule for Fully Solution-Processed Multilayer White Electrophosphorescent Devices,” Org. Lett. 16(4), 1140–1143 (2014).
[Crossref]
E. Fortunato, P. Barquinha, and R. Martins, “Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances,” Adv. Mater. 24(22), 2945–2986 (2012).
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V. I. Klimov, A. A. Mikhailovsky, D. W. McBranch, C. A. Leatherdale, and M. G. Bawendi, “Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots,” Science 287(5455), 1011–1013 (2000).
[Crossref]
X. Gong, Z. Yang, G. Walters, R. Comin, Z. Ning, E. Beauregard, V. Adinolfi, O. Voznyy, and E. H. Sargent, “Highly efficient quantum dot near-infrared light-emitting diodes,” Nat. Photonics 10(4), 253–257 (2016).
[Crossref]
H. M. Kim, A. R. bin Mohd Yusoff, T. W. Kim, Y. G. Seol, H. P. Kim, and J. Jang, “Semi-transparent quantum-dot light emitting diodes with an inverted structure,” J. Mater. Chem. C 2(12), 2259−2265 (2014).
[Crossref]
A. Castelli, F. Meinardi, M. Pasini, F. Galeotti, V. Pinchetti, M. Lorenzon, L. Manna, I. Moreels, U. Giovanella, and S. Brovelli, “High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers,” Nano Lett. 15(8), 5455–5464 (2015).
[Crossref]
W. K. Bae, S. Brovelli, and V. I. Klimov, “Spectroscopic insights into the performance of quantum dot light-emitting diodes,” MRS Bull. 38(9), 721–730 (2013).
[Crossref]
X. Dai, Z. Zhang, Y. Jin, Y. Niu, H. Cao, X. Liang, L. Chen, J. Wang, and X. Peng, “Solution-processed, high-performance light-emitting diodes based quantum dots,” Nature 515(7525), 96–99 (2014).
[Crossref]
J. Wang, C. Song, Z. Zhong, Z. Hu, S. Han, W. Xu, J. Peng, L. Ying, J. Wang, and Y. Cao, “In situ patterning of microgrooves via inkjet etching for a solution-processed OLED display,” J. Mater. Chem. C 5(20), 5005–5009 (2017).
[Crossref]
C. Jiang, Z. Zhong, B. Liu, Z. He, J. Zou, L. Wang, J. Wang, J. Peng, and Y. Cao, “Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices,” ACS Appl. Mater. Interfaces 8(39), 26162–26168 (2016).
[Crossref]
W. Xu, Z. Hu, H. Liu, L. Lan, J. Peng, J. Wang, and Y. Cao, “Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel,” Sci. Rep. 6(1), 29055 (2016).
[Crossref]
A. Castelli, F. Meinardi, M. Pasini, F. Galeotti, V. Pinchetti, M. Lorenzon, L. Manna, I. Moreels, U. Giovanella, and S. Brovelli, “High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers,” Nano Lett. 15(8), 5455–5464 (2015).
[Crossref]
H. Jin, H. Moon, W. Lee, H. Hwangbo, S. H. Yong, H. K. Chung, and H. Chae, “Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers,” RSC Adv. 9(21), 11634–11640 (2019).
[Crossref]
E. Nam, C. Lee, S. J. Kim, H. K. Chung, and H. Chae, “Stability and dispersion improvement of quantum-dot ligands and a siloxane matrix,” Opt. Express 27(14), 20037–20046 (2019).
[Crossref]
H. Kim, W. Lee, H. Moon, S. J. Kim, H. K. Chung, and H. Chae, “Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes,” Opt. Express 27(16), A1287–A1296 (2019).
[Crossref]
Y. Fu, W. Jiang, D. Kim, W. Lee, and H. Chae, “Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers,” ACS Appl. Mater. Interfaces 10(20), 17295–17300 (2018).
[Crossref]
Y. Fu, D. Kim, W. Jiang, W. Yin, T. K. Ahn, and H. Chae, “Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots,” RSC Adv. 7(65), 40866–40872 (2017).
[Crossref]
D. Kim, Y. Fu, S. Kim, W. Lee, K. H. Lee, H. K. Chung, H. J. Lee, H. Yang, and H. Chae, “Polyethylenimine Ethoxylated-Mediated All Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device,” ACS Nano 11(2), 1982–1990 (2017).
[Crossref]
Y. Fu, D. Kim, H. Moon, H. Yang, and H. Chae, “Hexamethyldisilazane-mediated, full-solution-processed inverted quantum dot-light-emitting diodes,” J. Mater. Chem. C 5(3), 522–526 (2017).
[Crossref]
T.-H. Kim, K.-S. Cho, E. K. Lee, S. J. Lee, J. Chae, J. W. Kim, D. H. Kim, J.-Y. Kwon, G. Amaratunga, and S. Y. Lee, “Full-colour quantum dot displays fabricated by transfer printing,” Nat. Photonics 5(3), 176–182 (2011).
[Crossref]
J. Lim, M. Park, W. K. Bae, D. Lee, S. Lee, C. Lee, and K. Char, “Highly Efficient Cadmium-Free Quantum Dot Light-Emitting Diodes Enabled by the Direct Formation of Excitons within InP@ZnSeS Quantum Dots,” ACS Nano 7(10), 9019–9026 (2013).
[Crossref]
J. Kwak, W. K. Bae, D. Lee, I. Park, J. Lim, M. Park, H. Cho, H. Woo, D. Y. Yoon, K. Char, S. Lee, and C. Lee, “Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure,” Nano Lett. 12(5), 2362–2366 (2012).
[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
H. C. Wang, H. Zhang, H. Y. Chen, H. C. Yeh, M. R. Tseng, R. J. Chung, S. Chen, and R. S. Liu, “Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2,” Small 13(13), 1603962 (2017).
[Crossref]
X. Dai, Z. Zhang, Y. Jin, Y. Niu, H. Cao, X. Liang, L. Chen, J. Wang, and X. Peng, “Solution-processed, high-performance light-emitting diodes based quantum dots,” Nature 515(7525), 96–99 (2014).
[Crossref]
P. Tang, L. Xie, X. Xiong, C. Wei, W. Zhao, M. Chen, J. Zhuang, W. Su, and Z. Cui, “Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLEDs via Blending Polymer TFB and Cross-Linkable Small Molecules for a Solvent-Resistant Hole Transport Layer,” ACS Appl. Mater. Interfaces 12(11), 13087–13095 (2020).
[Crossref]
H. C. Wang, H. Zhang, H. Y. Chen, H. C. Yeh, M. R. Tseng, R. J. Chung, S. Chen, and R. S. Liu, “Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2,” Small 13(13), 1603962 (2017).
[Crossref]
Y. Sun, Y. Jiang, H. Peng, J. Wei, S. Zhang, and S. Chen, “Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer,” Nanoscale 9(26), 8962–8969 (2017).
[Crossref]
H. Zhang, H. Li, X. Sun, and S. Chen, “Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing,” ACS Appl. Mater. Interfaces 8(8), 5493–5498 (2016).
[Crossref]
H. Cho, S. H. Jeong, M. H. Park, Y. H. Kim, C. Wolf, C. L. Lee, J. H. Heo, A. Sadhanala, N. Myoung, and S. Yoo, “Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes,” Science 350(6265), 1222–1225 (2015).
[Crossref]
J. Kwak, W. K. Bae, D. Lee, I. Park, J. Lim, M. Park, H. Cho, H. Woo, D. Y. Yoon, K. Char, S. Lee, and C. Lee, “Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure,” Nano Lett. 12(5), 2362–2366 (2012).
[Crossref]
T.-H. Kim, K.-S. Cho, E. K. Lee, S. J. Lee, J. Chae, J. W. Kim, D. H. Kim, J.-Y. Kwon, G. Amaratunga, and S. Y. Lee, “Full-colour quantum dot displays fabricated by transfer printing,” Nat. Photonics 5(3), 176–182 (2011).
[Crossref]
E. Nam, C. Lee, S. J. Kim, H. K. Chung, and H. Chae, “Stability and dispersion improvement of quantum-dot ligands and a siloxane matrix,” Opt. Express 27(14), 20037–20046 (2019).
[Crossref]
H. Kim, W. Lee, H. Moon, S. J. Kim, H. K. Chung, and H. Chae, “Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes,” Opt. Express 27(16), A1287–A1296 (2019).
[Crossref]
H. Jin, H. Moon, W. Lee, H. Hwangbo, S. H. Yong, H. K. Chung, and H. Chae, “Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers,” RSC Adv. 9(21), 11634–11640 (2019).
[Crossref]
D. Kim, Y. Fu, S. Kim, W. Lee, K. H. Lee, H. K. Chung, H. J. Lee, H. Yang, and H. Chae, “Polyethylenimine Ethoxylated-Mediated All Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device,” ACS Nano 11(2), 1982–1990 (2017).
[Crossref]
H. C. Wang, H. Zhang, H. Y. Chen, H. C. Yeh, M. R. Tseng, R. J. Chung, S. Chen, and R. S. Liu, “Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2,” Small 13(13), 1603962 (2017).
[Crossref]
X. Gong, Z. Yang, G. Walters, R. Comin, Z. Ning, E. Beauregard, V. Adinolfi, O. Voznyy, and E. H. Sargent, “Highly efficient quantum dot near-infrared light-emitting diodes,” Nat. Photonics 10(4), 253–257 (2016).
[Crossref]
P. Tang, L. Xie, X. Xiong, C. Wei, W. Zhao, M. Chen, J. Zhuang, W. Su, and Z. Cui, “Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLEDs via Blending Polymer TFB and Cross-Linkable Small Molecules for a Solvent-Resistant Hole Transport Layer,” ACS Appl. Mater. Interfaces 12(11), 13087–13095 (2020).
[Crossref]
X. Dai, Y. Deng, X. Peng, and Y. Jin, “Quantum-Dot Light-Emitting Diodes for Large-Area Displays: Towards the Dawn of Commercialization,” Adv. Mater. 29, 1607022 (2017)..
[Crossref]
X. Dai, Z. Zhang, Y. Jin, Y. Niu, H. Cao, X. Liang, L. Chen, J. Wang, and X. Peng, “Solution-processed, high-performance light-emitting diodes based quantum dots,” Nature 515(7525), 96–99 (2014).
[Crossref]
X. Dai, Y. Deng, X. Peng, and Y. Jin, “Quantum-Dot Light-Emitting Diodes for Large-Area Displays: Towards the Dawn of Commercialization,” Adv. Mater. 29, 1607022 (2017)..
[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
J.-H. Jo, D.-Y. Jo, S.-H. Lee, S.-Y. Yoon, H.-B. Lim, B.-J. Lee, Y. R. Do, and H. Yang, “InP-Based Quantum Dots Having an InP Core, Composition-Gradient ZnSeS Inner Shell, and ZnS Outer Shell with Sharp, Bright Emissivity, and Blue Absorptivity for Display Devices,” ACS Appl. Nano Mater. 3(2), 1972–1980 (2020).
[Crossref]
W. Jiang, H. Xu, X. Ban, G. Yuan, Y. Sun, B. Huang, L. Duan, and Y. Qiu, “Alcohol-Soluble Electron-Transport Small Molecule for Fully Solution-Processed Multilayer White Electrophosphorescent Devices,” Org. Lett. 16(4), 1140–1143 (2014).
[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
L. Wang, Y. Lv, J. Lin, Y. Fan, J. Zhao, Y. Wang, and X. Liu, “High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection,” Nanoscale 9(20), 6748–6754 (2017).
[Crossref]
E. Fortunato, P. Barquinha, and R. Martins, “Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances,” Adv. Mater. 24(22), 2945–2986 (2012).
[Crossref]
Y. Fu, W. Jiang, D. Kim, W. Lee, and H. Chae, “Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers,” ACS Appl. Mater. Interfaces 10(20), 17295–17300 (2018).
[Crossref]
Y. Fu, D. Kim, W. Jiang, W. Yin, T. K. Ahn, and H. Chae, “Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots,” RSC Adv. 7(65), 40866–40872 (2017).
[Crossref]
Y. Fu, D. Kim, H. Moon, H. Yang, and H. Chae, “Hexamethyldisilazane-mediated, full-solution-processed inverted quantum dot-light-emitting diodes,” J. Mater. Chem. C 5(3), 522–526 (2017).
[Crossref]
D. Kim, Y. Fu, S. Kim, W. Lee, K. H. Lee, H. K. Chung, H. J. Lee, H. Yang, and H. Chae, “Polyethylenimine Ethoxylated-Mediated All Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device,” ACS Nano 11(2), 1982–1990 (2017).
[Crossref]
A. Castelli, F. Meinardi, M. Pasini, F. Galeotti, V. Pinchetti, M. Lorenzon, L. Manna, I. Moreels, U. Giovanella, and S. Brovelli, “High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers,” Nano Lett. 15(8), 5455–5464 (2015).
[Crossref]
A. Garcia, R. Yang, Y. Jin, B. Walker, and T. Q. Nguyen, “Structure-function relationships of conjugated polyelectrolyte electron injection layers in polymer light emitting diodes,” Appl. Phys. Lett. 91(15), 153502 (2007).
[Crossref]
H. M. Kim, D. Geng, J. Kim, E. Hwang, and J. Jang, “Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes,” ACS Appl. Mater. Interfaces 8(42), 28727–28736 (2016).
[Crossref]
A. Castelli, F. Meinardi, M. Pasini, F. Galeotti, V. Pinchetti, M. Lorenzon, L. Manna, I. Moreels, U. Giovanella, and S. Brovelli, “High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers,” Nano Lett. 15(8), 5455–5464 (2015).
[Crossref]
X. Gong, Z. Yang, G. Walters, R. Comin, Z. Ning, E. Beauregard, V. Adinolfi, O. Voznyy, and E. H. Sargent, “Highly efficient quantum dot near-infrared light-emitting diodes,” Nat. Photonics 10(4), 253–257 (2016).
[Crossref]
Q. Lin, L. Wang, Z. Li, H. Shen, L. Guo, Y. Kuang, H. Wang, and L. S. Li, “Nonblinking Quantum-Dot-Based Blue Light-Emitting Diodes with High Efficiency and a Balanced Charge-Injection Process,” ACS Photonics 5(3), 939–946 (2018).
[Crossref]
E.-P. Jang, C.-Y. Han, S.-W. Lim, J.-H. Jo, D.-Y. Jo, S.-H. Lee, S.-Y. Yoon, and H. Yang, “Synthesis of Alloyed ZnSeTe Quantum Dots as Bright, Color-Pure Blue Emitters,” ACS Appl. Mater. Interfaces 11(49), 46062–46069 (2019).
[Crossref]
J. Wang, C. Song, Z. Zhong, Z. Hu, S. Han, W. Xu, J. Peng, L. Ying, J. Wang, and Y. Cao, “In situ patterning of microgrooves via inkjet etching for a solution-processed OLED display,” J. Mater. Chem. C 5(20), 5005–5009 (2017).
[Crossref]
H. Zheng, Y. Zheng, N. Liu, N. Ai, Q. Wang, S. Wu, J. Zhou, D. Hu, S. Yu, and S. Han, “All-solution processed polymer light-emitting diode displays,” Nat. Commun. 4(1), 1971 (2013).
[Crossref]
C. Jiang, Z. Zhong, B. Liu, Z. He, J. Zou, L. Wang, J. Wang, J. Peng, and Y. Cao, “Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices,” ACS Appl. Mater. Interfaces 8(39), 26162–26168 (2016).
[Crossref]
H. Cho, S. H. Jeong, M. H. Park, Y. H. Kim, C. Wolf, C. L. Lee, J. H. Heo, A. Sadhanala, N. Myoung, and S. Yoo, “Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes,” Science 350(6265), 1222–1225 (2015).
[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
H. Zheng, Y. Zheng, N. Liu, N. Ai, Q. Wang, S. Wu, J. Zhou, D. Hu, S. Yu, and S. Han, “All-solution processed polymer light-emitting diode displays,” Nat. Commun. 4(1), 1971 (2013).
[Crossref]
J. Wang, C. Song, Z. Zhong, Z. Hu, S. Han, W. Xu, J. Peng, L. Ying, J. Wang, and Y. Cao, “In situ patterning of microgrooves via inkjet etching for a solution-processed OLED display,” J. Mater. Chem. C 5(20), 5005–5009 (2017).
[Crossref]
W. Xu, Z. Hu, H. Liu, L. Lan, J. Peng, J. Wang, and Y. Cao, “Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel,” Sci. Rep. 6(1), 29055 (2016).
[Crossref]
W. Jiang, H. Xu, X. Ban, G. Yuan, Y. Sun, B. Huang, L. Duan, and Y. Qiu, “Alcohol-Soluble Electron-Transport Small Molecule for Fully Solution-Processed Multilayer White Electrophosphorescent Devices,” Org. Lett. 16(4), 1140–1143 (2014).
[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
H. M. Kim, D. Geng, J. Kim, E. Hwang, and J. Jang, “Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes,” ACS Appl. Mater. Interfaces 8(42), 28727–28736 (2016).
[Crossref]
H. Jin, H. Moon, W. Lee, H. Hwangbo, S. H. Yong, H. K. Chung, and H. Chae, “Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers,” RSC Adv. 9(21), 11634–11640 (2019).
[Crossref]
E.-P. Jang, C.-Y. Han, S.-W. Lim, J.-H. Jo, D.-Y. Jo, S.-H. Lee, S.-Y. Yoon, and H. Yang, “Synthesis of Alloyed ZnSeTe Quantum Dots as Bright, Color-Pure Blue Emitters,” ACS Appl. Mater. Interfaces 11(49), 46062–46069 (2019).
[Crossref]
H. M. Kim, D. Geng, J. Kim, E. Hwang, and J. Jang, “Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes,” ACS Appl. Mater. Interfaces 8(42), 28727–28736 (2016).
[Crossref]
H. M. Kim, A. R. bin Mohd Yusoff, T. W. Kim, Y. G. Seol, H. P. Kim, and J. Jang, “Semi-transparent quantum-dot light emitting diodes with an inverted structure,” J. Mater. Chem. C 2(12), 2259−2265 (2014).
[Crossref]
H. M. Kim, J. H. Youn, G. J. Seo, and J. Jang, “Inverted quantum-dot light-emitting diodes with solution-processed aluminium–zinc oxide as a cathode buffer,” J. Mater. Chem. C 1(8), 1567–1573 (2013).
[Crossref]
H. Cho, S. H. Jeong, M. H. Park, Y. H. Kim, C. Wolf, C. L. Lee, J. H. Heo, A. Sadhanala, N. Myoung, and S. Yoo, “Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes,” Science 350(6265), 1222–1225 (2015).
[Crossref]
C. Jiang, Z. Zhong, B. Liu, Z. He, J. Zou, L. Wang, J. Wang, J. Peng, and Y. Cao, “Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices,” ACS Appl. Mater. Interfaces 8(39), 26162–26168 (2016).
[Crossref]
Y. Fu, W. Jiang, D. Kim, W. Lee, and H. Chae, “Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers,” ACS Appl. Mater. Interfaces 10(20), 17295–17300 (2018).
[Crossref]
Y. Fu, D. Kim, W. Jiang, W. Yin, T. K. Ahn, and H. Chae, “Excellent stability of thicker shell CdSe@ZnS/ZnS quantum dots,” RSC Adv. 7(65), 40866–40872 (2017).
[Crossref]
W. Jiang, H. Xu, X. Ban, G. Yuan, Y. Sun, B. Huang, L. Duan, and Y. Qiu, “Alcohol-Soluble Electron-Transport Small Molecule for Fully Solution-Processed Multilayer White Electrophosphorescent Devices,” Org. Lett. 16(4), 1140–1143 (2014).
[Crossref]
Y. Sun, Y. Jiang, H. Peng, J. Wei, S. Zhang, and S. Chen, “Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer,” Nanoscale 9(26), 8962–8969 (2017).
[Crossref]
H. Jin, H. Moon, W. Lee, H. Hwangbo, S. H. Yong, H. K. Chung, and H. Chae, “Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers,” RSC Adv. 9(21), 11634–11640 (2019).
[Crossref]
X. Dai, Y. Deng, X. Peng, and Y. Jin, “Quantum-Dot Light-Emitting Diodes for Large-Area Displays: Towards the Dawn of Commercialization,” Adv. Mater. 29, 1607022 (2017)..
[Crossref]
X. Dai, Z. Zhang, Y. Jin, Y. Niu, H. Cao, X. Liang, L. Chen, J. Wang, and X. Peng, “Solution-processed, high-performance light-emitting diodes based quantum dots,” Nature 515(7525), 96–99 (2014).
[Crossref]
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[Crossref]
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P. Tang, L. Xie, X. Xiong, C. Wei, W. Zhao, M. Chen, J. Zhuang, W. Su, and Z. Cui, “Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLEDs via Blending Polymer TFB and Cross-Linkable Small Molecules for a Solvent-Resistant Hole Transport Layer,” ACS Appl. Mater. Interfaces 12(11), 13087–13095 (2020).
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[Crossref]
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[Crossref]
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[Crossref]
H. M. Kim, J. H. Youn, G. J. Seo, and J. Jang, “Inverted quantum-dot light-emitting diodes with solution-processed aluminium–zinc oxide as a cathode buffer,” J. Mater. Chem. C 1(8), 1567–1573 (2013).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
Y. Sun, Y. Jiang, H. Peng, J. Wei, S. Zhang, and S. Chen, “Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer,” Nanoscale 9(26), 8962–8969 (2017).
[Crossref]
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[Crossref]
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[Crossref]
P. Tang, L. Xie, X. Xiong, C. Wei, W. Zhao, M. Chen, J. Zhuang, W. Su, and Z. Cui, “Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLEDs via Blending Polymer TFB and Cross-Linkable Small Molecules for a Solvent-Resistant Hole Transport Layer,” ACS Appl. Mater. Interfaces 12(11), 13087–13095 (2020).
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[Crossref]
C. Jiang, Z. Zhong, B. Liu, Z. He, J. Zou, L. Wang, J. Wang, J. Peng, and Y. Cao, “Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices,” ACS Appl. Mater. Interfaces 8(39), 26162–26168 (2016).
[Crossref]
H. Zheng, Y. Zheng, N. Liu, N. Ai, Q. Wang, S. Wu, J. Zhou, D. Hu, S. Yu, and S. Han, “All-solution processed polymer light-emitting diode displays,” Nat. Commun. 4(1), 1971 (2013).
[Crossref]
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[Crossref]
K. Ding, H. Chen, L. Fan, B. Wang, Z. Huang, S. Zhuang, B. Hu, and L. Wang, “Polyethylenimine Insulativity-Dominant Charge-Injection Balance for Highly Efficient Inverted Quantum Dot Light-Emitting Diodes,” ACS Appl. Mater. Interfaces 9(23), 20231–20238 (2017).
[Crossref]
C. Jiang, Z. Zhong, B. Liu, Z. He, J. Zou, L. Wang, J. Wang, J. Peng, and Y. Cao, “Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices,” ACS Appl. Mater. Interfaces 8(39), 26162–26168 (2016).
[Crossref]