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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
J.-J. Kim, J. Lee, S.-P. Yang, H. G. Kim, H.-S. Kweon, S. Yoo, and K.-H. Jeong, “Biologically inspired organic light-emitting diodes,” Nano Lett. 16(5), 2994–3000 (2016).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
[PubMed]
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[Crossref]
[PubMed]
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[Crossref]
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[Crossref]
[PubMed]
S. H. Kim, K.-D. Lee, J.-Y. Kim, M.-K. Kwon, and S.-J. Park, “Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography,” Nanotechnology 18(5), 055306 (2007).
[Crossref]
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[Crossref]
[PubMed]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou, “Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes,” Electrochem. Solid-State Lett. 10(6), H175–H177 (2007).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
[PubMed]
S. H. Kim, K.-D. Lee, J.-Y. Kim, M.-K. Kwon, and S.-J. Park, “Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography,” Nanotechnology 18(5), 055306 (2007).
[Crossref]
J. K. Sheu, I.-H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,” Appl. Phys. Lett. 93(10), 103507 (2008).
[Crossref]
Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates,” IEEE Photonics Technol. Lett. 18(10), 1152–1154 (2006).
[Crossref]
J.-J. Kim, J. Lee, S.-P. Yang, H. G. Kim, H.-S. Kweon, S. Yoo, and K.-H. Jeong, “Biologically inspired organic light-emitting diodes,” Nano Lett. 16(5), 2994–3000 (2016).
[Crossref]
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K. H. Lee, Y.-T. Moon, S. K. Oh, and J. S. Kwak, “High efficiency and ESD of GaN-based LEDs with patterned ion-damaged current blocking Layer,” IEEE Photonics Technol. Lett. 27(2), 149–152 (2015).
[Crossref]
S. H. Kim, K.-D. Lee, J.-Y. Kim, M.-K. Kwon, and S.-J. Park, “Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography,” Nanotechnology 18(5), 055306 (2007).
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[Crossref]
H. H. Jeong, S. Y. Lee, Y. K. Jeong, K. K. Choi, J.-O. Song, Y.-H. Lee, and T.-Y. Seong, “Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer,” Electrochem. Solid-State Lett. 13(7), H237–H239 (2010).
[Crossref]
H. Kim, S.-N. Lee, Y. Park, J. S. Kwak, and T.-Y. Seong, “Metallization contacts to nonpolar a-plane n-type GaN,” Appl. Phys. Lett. 93(3), 032105 (2008).
[Crossref]
H.-G. Hong, S.-S. Kim, D.-Y. Kim, T. Lee, J.-O. Song, J. H. Cho, C. Sone, Y. Park, and T.-Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006).
[Crossref]
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M.-A. Tsai, P. Yu, J. R. Chen, J. K. Huang, C. H. Chiu, H. C. Kuo, T. C. Lu, S. H. Lin, and S. C. Wang, “Improving light output power of the GaN-based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer,” IEEE Photonics Technol. Lett. 21(11), 688–690 (2009).
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D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
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[Crossref]
[PubMed]
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[Crossref]
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[Crossref]
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[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonabe, K. Deduchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(12B), L1431–L1433 (2002).
[Crossref]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonabe, K. Deduchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(12B), L1431–L1433 (2002).
[Crossref]
K. H. Lee, Y.-T. Moon, S. K. Oh, and J. S. Kwak, “High efficiency and ESD of GaN-based LEDs with patterned ion-damaged current blocking Layer,” IEEE Photonics Technol. Lett. 27(2), 149–152 (2015).
[Crossref]
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes and laser diodes for energy-efficient lighting and displays,” Acta Mater. 61(3), 945–951 (2013).
[Crossref]
S.-M. Pan, R.-C. Tu, Y.-M. Fan, R.-C. Yeh, and J.-T. Hsu, “Improvement of InGaN–GaN light-emitting diodes with surface-textured ITO transparent ohmic contacts,” IEEE Photonics Technol. Lett. 15(5), 649–651 (2003).
[Crossref]
Y.-J. Moon, D. Moon, J. Jang, J.-Y. Na, J.-H. Song, M.-K. Seo, S. Kim, D. Bae, E. H. Park, Y. Park, S.-K. Kim, and E. Yoon, “Microstructured air cavities as high-index contrast substrates with strong diffraction for light-emitting diodes,” Nano Lett. 16(5), 3301–3308 (2016).
[Crossref]
[PubMed]
J.-S. Park, J. Han, and T.-Y. Seong, “Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer,” Superlattices Microstruct. 83, 361–366 (2015).
[Crossref]
D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett. 87(20), 203508 (2005).
[Crossref]
S. H. Kim, K.-D. Lee, J.-Y. Kim, M.-K. Kwon, and S.-J. Park, “Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography,” Nanotechnology 18(5), 055306 (2007).
[Crossref]
C. Huh, J.-M. Lee, D.-J. Kim, and S.-J. Park, “Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer,” Appl. Phys. Lett. 92(5), 2248–2250 (2002).
Y.-J. Moon, D. Moon, J. Jang, J.-Y. Na, J.-H. Song, M.-K. Seo, S. Kim, D. Bae, E. H. Park, Y. Park, S.-K. Kim, and E. Yoon, “Microstructured air cavities as high-index contrast substrates with strong diffraction for light-emitting diodes,” Nano Lett. 16(5), 3301–3308 (2016).
[Crossref]
[PubMed]
H. Kim, S.-N. Lee, Y. Park, J. S. Kwak, and T.-Y. Seong, “Metallization contacts to nonpolar a-plane n-type GaN,” Appl. Phys. Lett. 93(3), 032105 (2008).
[Crossref]
H.-G. Hong, S.-S. Kim, D.-Y. Kim, T. Lee, J.-O. Song, J. H. Cho, C. Sone, Y. Park, and T.-Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006).
[Crossref]
D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett. 87(20), 203508 (2005).
[Crossref]
D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett. 87(20), 203508 (2005).
[Crossref]
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi., A Appl. Mater. Sci. 212(5), 899–913 (2015).
[Crossref]
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes and laser diodes for energy-efficient lighting and displays,” Acta Mater. 61(3), 945–951 (2013).
[Crossref]
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi., A Appl. Mater. Sci. 212(5), 899–913 (2015).
[Crossref]
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes and laser diodes for energy-efficient lighting and displays,” Acta Mater. 61(3), 945–951 (2013).
[Crossref]
D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett. 87(20), 203508 (2005).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonabe, K. Deduchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(12B), L1431–L1433 (2002).
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Y.-J. Moon, D. Moon, J. Jang, J.-Y. Na, J.-H. Song, M.-K. Seo, S. Kim, D. Bae, E. H. Park, Y. Park, S.-K. Kim, and E. Yoon, “Microstructured air cavities as high-index contrast substrates with strong diffraction for light-emitting diodes,” Nano Lett. 16(5), 3301–3308 (2016).
[Crossref]
[PubMed]
J.-S. Park, J. Han, and T.-Y. Seong, “Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer,” Superlattices Microstruct. 83, 361–366 (2015).
[Crossref]
H. H. Jeong, S. Y. Lee, Y. K. Jeong, K. K. Choi, J.-O. Song, Y.-H. Lee, and T.-Y. Seong, “Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer,” Electrochem. Solid-State Lett. 13(7), H237–H239 (2010).
[Crossref]
H. Kim, S.-N. Lee, Y. Park, J. S. Kwak, and T.-Y. Seong, “Metallization contacts to nonpolar a-plane n-type GaN,” Appl. Phys. Lett. 93(3), 032105 (2008).
[Crossref]
H.-G. Hong, S.-S. Kim, D.-Y. Kim, T. Lee, J.-O. Song, J. H. Cho, C. Sone, Y. Park, and T.-Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006).
[Crossref]
J.-O. Song, J. S. Kwak, and T.-Y. Seong, “Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip LEDs,” Appl. Phys. Lett. 86(6), 062103 (2005).
[Crossref]
T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]
M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]
J. K. Sheu, I.-H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,” Appl. Phys. Lett. 93(10), 103507 (2008).
[Crossref]
S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou, “Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes,” Electrochem. Solid-State Lett. 10(6), H175–H177 (2007).
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S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou, “Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes,” Electrochem. Solid-State Lett. 10(6), H175–H177 (2007).
[Crossref]
J. K. Sheu, I.-H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads,” Appl. Phys. Lett. 93(10), 103507 (2008).
[Crossref]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonabe, K. Deduchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(12B), L1431–L1433 (2002).
[Crossref]
J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Appl. Phys. Lett. 84(19), 3885–3887 (2004).
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[Crossref]
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonabe, K. Deduchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41(12B), L1431–L1433 (2002).
[Crossref]
H.-G. Hong, S.-S. Kim, D.-Y. Kim, T. Lee, J.-O. Song, J. H. Cho, C. Sone, Y. Park, and T.-Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006).
[Crossref]
D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett. 87(20), 203508 (2005).
[Crossref]
Y.-J. Moon, D. Moon, J. Jang, J.-Y. Na, J.-H. Song, M.-K. Seo, S. Kim, D. Bae, E. H. Park, Y. Park, S.-K. Kim, and E. Yoon, “Microstructured air cavities as high-index contrast substrates with strong diffraction for light-emitting diodes,” Nano Lett. 16(5), 3301–3308 (2016).
[Crossref]
[PubMed]
H. H. Jeong, S. Y. Lee, Y. K. Jeong, K. K. Choi, J.-O. Song, Y.-H. Lee, and T.-Y. Seong, “Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer,” Electrochem. Solid-State Lett. 13(7), H237–H239 (2010).
[Crossref]
H.-G. Hong, S.-S. Kim, D.-Y. Kim, T. Lee, J.-O. Song, J. H. Cho, C. Sone, Y. Park, and T.-Y. Seong, “Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process,” Appl. Phys. Lett. 88(10), 103505 (2006).
[Crossref]
J.-O. Song, J. S. Kwak, and T.-Y. Seong, “Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip LEDs,” Appl. Phys. Lett. 86(6), 062103 (2005).
[Crossref]
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, “The efficiency challenge of nitride light-emitting diodes for lighting,” Phys. Status Solidi., A Appl. Mater. Sci. 212(5), 899–913 (2015).
[Crossref]
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes and laser diodes for energy-efficient lighting and displays,” Acta Mater. 61(3), 945–951 (2013).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
C. C. Kao, Y. K. Su, and C. L. Lin, “Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer,” IEEE Photonics Technol. Lett. 23(14), 986–988 (2011).
[Crossref]
S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes and laser diodes for energy-efficient lighting and displays,” Acta Mater. 61(3), 945–951 (2013).
[Crossref]
M.-A. Tsai, P. Yu, J. R. Chen, J. K. Huang, C. H. Chiu, H. C. Kuo, T. C. Lu, S. H. Lin, and S. C. Wang, “Improving light output power of the GaN-based vertical-injection light-emitting diodes by Mg+ implanted current blocking layer,” IEEE Photonics Technol. Lett. 21(11), 688–690 (2009).
[Crossref]
S.-M. Pan, R.-C. Tu, Y.-M. Fan, R.-C. Yeh, and J.-T. Hsu, “Improvement of InGaN–GaN light-emitting diodes with surface-textured ITO transparent ohmic contacts,” IEEE Photonics Technol. Lett. 15(5), 649–651 (2003).
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