Abstract

We report on the first passively Q-switched Nd:YAlO3 laser at ~1079.5 nm using MoS2 as saturable absorber. The MoS2 saturable absorber is fabricated by transferring the liquid-phase-exfoliated MoS2 nanosheets onto a BK7 glass substrate. By inserting the glass MoS2 saturable absorber into a plano-concave Nd:YAlO3 laser cavity, we obtain a stable Q-switched laser operation with a maximum average output power of 0.26 W corresponding to a pulse repetition rate of 232.5 kHz, a pulse width of 227 ns and a pulse energy of about 1.11 μJ. The results experimentally confirm the promising application of the new kind of 2D material, few-layer MoS2, in solid state lasers.

© 2014 Optical Society of America

1. Introduction

Q switching is an important and major technique for generating short laser pulses in μs and ns time durations. Q-switched diode-pumped solid state lasers (DPSSLs) with high peak power and short pulse width have attracted a great deal of attention for applications in laser communication, remote sensing, scientific research and medicine. In general, the generation of passively Q-switched laser pulses depends strongly on the availability of suitable saturable absorbers (SAs). From the viewpoint of materials, SAs used so far can be grouped into three categories, namely transition-metal-ion-doped materials, semiconductors and nanosheets materials. Transition-metal-ion-doped SAs mainly include Cr4+-doped host crystals like Cr:YAG [1], Cr:GSGG [2], Cr:YSO [3], Cr:SFS or Cr:CGS [4], but also Cr2+-, V3+- and Co2+-doped crystals like Cr:ZnSe, Cr:ZnS [5], Cr:CdMnTe [6], V:YAG [7], Co:MALO and Co:LMA [8]. SESAMs (semiconductor saturable absorber mirrors) [9] are the representative of semiconductor SAs. Both types of conventional SAs have specific advantages, but the same drawback: their operating wavelengths are limited to particular spectral bands. Moreover, the transition-metal-ion-doped crystals as well as semiconductors require specific and expensive fabrication techniques. Compared with transition-metal-ion-doped materials and SESAMs, the third category of SAs, namely the newly discovered nanosheets materials like CNTs (carbon nanotubes [10, 11]), graphene [12–14] and TIs (topological insulators like Bi2Se3 and Bi2Te3 [15–17]) now appear more and more attractive because of ultra-broadband saturable absorption, and relatively easy and low cost fabrication processes. TI-based SAs, more particularly, have attracted a lot of attention in the recent several years. For example, in 2012, Zhao et al. reported an efficient ultra-short pulse generation operating at 1558 nm by using Bi2Te3 [16] and one year later we demonstrated a Q-switched Yb3+-doped fiber laser with Bi2Se3 [15]. However, this does not mean that they have already reached the maturity of the former materials. CNTs, for instance, were reported to have cluster-induced losses and suitable diameter control of the CNT is often demanded for broadband saturable absorption [13]. Relatively low modulation depth and damage threshold could prohibit the generation of large pulse energies using graphene, and in the case of TIs, some important optical properties are still unknown. Therefore, these broadband materials seem promising but further works are necessary for a real development. Very recently, a new kind of 2D nanosheets material, MoS2 (Molybdenum sulfide), has been found to be promising for optoelectronic applications [18–22]. Wang et al. [20] firstly observed the saturable absorption phenomenon of MoS2 at 800 nm. In 2014, Zhang et al. [21] investigated the 1054 nm passively mode-locked laser operation of an Yb3+-doped fiber laser, and Woodward et al. [22] demonstrated the Q-switched laser operation of an Yb3+-doped fiber laser at 1068 nm. Liu et al. [23] also recently reported a femtosecond pulsed Er3+-doped fiber laser operating at 1.55 μm and Huang et al [24] the Q-switched laser operation of a similar type of fiber laser by using MoS2, the latter giving a more deeper explanation about the origin of the broadband saturable absorption in this type of material. At present, the study of these MoS2-based SAs are just at the beginning and further investigations for entirely exploiting their saturable absorption properties are still very necessary, especially in the field of SSLs based on bulk crystals in order to achieve higher pulse peak powers and pulse energies than with fibers.

Nd:YAP (YAlO3) is a robust laser crystal with thermo-mechanical and laser properties comparable to Nd:YAG. The effective emission cross section of the strongest emission line in Nd:YAP occurs at 1079.5 nm for light polarized along the c crystallographic axis and is comparable to that found for Nd:YAG at 1064 nm [25]. Moreover, the Nd:YAP 1079.5 nm laser line is even broader than the 1064 nm laser line of Nd:YAG, which is more favorable for short pulse generation.

In this paper, we demonstrate the first diode-pumped and Q-switched Nd:YAP laser at 1079 nm using a few-layer MoS2 material deposited on a BK7 glass substrate as saturable absorber. By inserting the MoS2 saturable absorber into a plano-concave Nd:YAP laser cavity, we could obtain a stable Q-switched laser operation with laser pulses of 1.11 μJ and 227 ns at a repetition rate of about 232 kHz at an absorbed diode pump power of 4.45 W.

2. Fabrication and characterization of MoS2 SA

The synthesis of the few-layer MoS2 was performed by using a liquid-phase exfoliation method. The bulk MoS2 was firstly put into a dimethyl formamide (DMF) solution and after a 20-hour sonication the few-layer MoS2 suspension was centrifuged for 30 minutes at 1000 rpm to remove the residual bulk MoS2.

The bulk MoS2 and the as-prepared few-layer MoS2 were both characterized by X-ray diffraction (XRD). The results are shown in Fig. 1(a). All the labeled peaks of the bulk MoS2 can be easily indexed and assigned to rhombohedral MoS2 (JCPDS NO. 06-0097). The bulk MoS2 was successfully exfoliated because the XRD pattern of the few-layer MoS2 showed a high [002] orientation and some characteristic peaks disappeared. The Raman spectra shown in Fig. 1(b) were also recorded to estimate the thickness of the few-layer MoS2 sample. The two characteristic peaks E2g1 and A1g of the bulk MoS2 occur at 380 and 410 cm−1. Compared with the bulk MoS2, the few-layer MoS2 sample shows a red shift of the E2g1 peak and a blue shift of the A1g peak, respectively. This implies a successful exfoliation of the bulk MoS2 with a thickness of 1-4 layers [26]. Finally, atomic force microscopy (AFM) image was registered for characterizing the thickness of the as-prepared few-layer MoS2 (see Fig. 1(c)). The height profile diagram (see Fig. 1(d)) indicates the MoS2 nanosheets are about 3 layers since the thickness of single layer is 0.65 nm [27].

 figure: Fig. 1

Fig. 1 (a) XRD and (b) Raman spectra of the bulk MoS2 and few-layer MoS2 samples; (c) AFM image and (d) height profile of an as-prepared few-layer MoS2 sample.

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Following the synthesis of the few-layer MoS2 suspension, it was proceeded to the following steps to simply transfer the MoS2 nanosheets onto uncoated BK7 glass plates (0.5 mm in thickness). First, proper amounts of homogeneous MoS2 solution were directly dripped onto the BK7 glass substrate. Second, the glass substrate was rotated at low speed to uniformly disperse the MoS2 solution. Third, we dried it inside an oven with a constant temperature of 70°C for two hours. The transmission of the MoS2 SA was measured using a Perkin Elmer Lambda 750 Spectrophotometer. As shown in Fig. 2, the few-layer MoS2 sample gives rise to a transmission of 88.6% at 1079 nm. A blank BK7 glass was also measured with a flat transmission of around 92.7%. The final transmission of the MoS2 SA itself could be deduced to be around 95.5%, which means a linear loss of about 4.5%. From Fig. 2, it is also demonstrated that the MoS2 sample exhibits a broad and flat transmission in the whole near- to mid-infrared spectral range. Using the same kind of experimental set-up as in [24], we estimated that the saturation optical intensity of the sample used in our laser experiments should be larger than about 13 MW/cm2.

 figure: Fig. 2

Fig. 2 Transmission spectra of the blank BK7 and MoS2-transferred BK7 glass substrates.

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3. Laser operation conditions

The laser experimental set-up is reported in Fig. 3. The pump source is an 18 W fiber-coupled continuous wave diode laser with a numerical aperture of 0.22 and a core diameter of 400 μm. The emitting wavelength varies from about 798 to about 803 nm with the increasing injected current. With a collimating doublet of 50-mm focal length and a focusing doublet of 40-mm focal length, the end face of the coupling fiber was imaged into the laser crystal with a minimum spot radius of about 160 μm. The laser cavity was a typical plano-concave cavity of about 12 mm.

 figure: Fig. 3

Fig. 3 Schematic experimental set-up of the Q-switched Nd:YAP laser

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The laser gain medium was a nicely polished b-cut Nd:YAP crystal with a Nd3+ doping concentration of 0.8at.% and dimensions of 3x3x5 mm3 (5 mm in thickness). The front facet S1 of the Nd:YAP crystal was coated and used as input mirror by depositing dichroic coating with a high transmission (more than 98%) at the pump wavelength and a high reflection (more than 99.5%) at the laser wavelength. The rear facet S2 was coated with an anti-reflection coating at laser wavelength to reduce the Fresnel losses. An output coupler (OC) with a radius of curvature of 1000 mm and a broadband transmission of about 6.5% around 1079 nm was employed. The laser spot size on the OC is estimated to be about 105 μm. In order to alleviate the thermal lensing effect, the Nd:YAP crystal was wrapped inside an indium foil and mounted in a water-cooled copper holder maintained at a temperature of 18°C. During Q-switching operation, the as-fabricated MoS2 SA was inserted into the cavity.

4. Laser results and discussion

For the b-cut Nd:YAP crystal, the highest emission peak is found at about 1079 nm with an emission cross section of 2.4 × 10−19 cm2 [25]. A free-running continuous-wave laser experiment was first fulfilled and a maximum output power of about 5.1 W was obtained for an absorbed pump power of about 14 W without appearance of any roll-off. With a threshold absorbed pump power of about 0.74 W, it means a laser slope efficiency of about 38.4%. In these conditions, the laser emission was monitored and measured with a peak wavelength of 1079.57 nm by using an optical spectrum analyzer HP 70951B.

The BK7 glass plate with MoS2 thin film was then inserted inside the laser cavity. By continuously increasing the pump power from the continuous-wave threshold and finely tilting the glass substrate, a stable Q-switched pulsed operation was achieved when the absorbed pump power exceeded about 2.16 W, thus for an incident pump power of about 2.87 W. Such a stable Q-switched laser operation could be maintained up to an incident pump power of 5.75 W, thus up to an absorbed pump power of 4.45 W. Beyond that limit, the output laser pulses became unstable probably because of increasing thermal effects and laser damage due to the poor thermo-mechanical properties of the MoS2 layer [28]. The stable laser output versus absorbed pump power curve is reported in Fig. 4(a). A maximum output power of 260 mW is achieved with a slope efficiency of about 10.6%. We then used a digital oscilloscope (Tektronix TDS 1012, 100MHz) and a fast photodetector (Thorlabs, DET10A/M) to characterize the corresponding laser pulses. The pulse trains and single pulse profile shown in Fig. 4(b) are those obtained at the maximum pump power of 5.75 W. The pulse duration was measured to be about 227 ns and the corresponding pulse repetition rate was recorded to be 232.5 kHz. Figure 4(c) shows the evolution of the pulse repetition rate and of the pulse width. The pulse repetition rate almost linearly increased from 32 to 232.5 kHz, while the pulse width shortened from 580 to 227 ns. According to the recorded pulse repetition rate and pulse width, we can approximately calculate the pulse peak power and pulse energy (see Fig. 4(d)). The maximum single pulse energy was estimated to be 1.11 μJ with a corresponding peak power of 4.92 W.

 figure: Fig. 4

Fig. 4 (a) Absorbed pump power versus output power for the Q-switching regime; (b) Single pulse profile of the Q-switched Nd:YAP laser. The inset shows the pulse train; (c) Evolutions of the pulse repetition rate and the pulse width with the absorbed pump power; (d) Evolution of the pulse peak power and the pulse energy with the absorbed pump power.

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Our results can be compared with that reported in Ref [18]. for another passively Q-switched SSL operating at 1064 nm and by using MoS2 SA, i.e. a maximum output power of 227 mW, a pulse width of 970 ns, a pulse energy of 0.31 µJ and a repetition rate of 732 kHz. Therefore, we obtain here in this work about the same output power but significantly shorter and more energetic laser pulses at a smaller pulse repetition rate. Furthermore, if we compare our MoS2-based Q-switched laser results with the various reported laser results based on other nanomaterials like CNTs, graphene and TIs (see in Table 1), our results can be considered as superior or at least comparable to the other ones. The present results can be certainly improved firstly by optimizing the laser cavity, by optimizing the modulation depth of the MoS2 SA and by removing the generated heat in MoS2 SA.

Tables Icon

Table 1. Comparison between the laser results obtained by passively Q-switching various 1µm Nd-based SSLs with MoS2 and other nanosheets SAs.

5. Conclusion

We have experimentally presented a passively Q-switched Nd:YAP solid state laser using MoS2 as saturable absorber. An average output power of 260 mW associated with 227 ns laser pulses of 1.11 μJ (4.92 W peak power) at a repetition rate of 232.5 kHz is obtained for an absorbed pump power of 4.45 W. Therefore, these laser results definitely demonstrate that few-layer MoS2 could be a very promising saturable absorber for the realization of compact and low cost short pulse Q-switched SSLs and also for the realization of ultra-short pulsed mode-locked SSLs.

Acknowledgments

The authors wish to thank the financial support from National Natural Science Foundation of China (61275050), the Specialized Research Fund for the Doctoral Program of Higher Education (20120121110034, 20130121120043), the Fundamental Research Funds for the Central Universities (2013121022), Natural Science Foundation of Fujian Province of China (2014J01251), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

References and links

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2. Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994). [CrossRef]  

3. Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995). [CrossRef]  

4. K. V. Yumashev, N. N. Posnov, I. A. Denisov, V. P. Mikhailov, and R. Moncorgé, “Nonlinear spectroscopy and passive Q-switching operation of Cr4+-doped SrGd4(SiO4)3O and CaGd4(SiO4)3O crystals,” J. Opt. Soc. Am. B 15(6), 1707–1713 (1998). [CrossRef]  

5. H. H. Yu, V. Petrov, U. Griebner, D. Parisi, S. Veronesi, and M. Tonelli, “Compact passively Q-switched diode-pumped Tm:LiLuF4 laser with 1.26 mJ output energy,” Opt. Lett. 37(13), 2544–2546 (2012). [CrossRef]   [PubMed]  

6. A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001). [CrossRef]  

7. A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001). [CrossRef]  

8. K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002). [CrossRef]  

9. A. Diebold, F. Emaury, C. Schriber, M. Golling, C. J. Saraceno, T. Südmeyer, and U. Keller, “SESAM mode-locked Yb:CaGdAlO4 thin disk laser with 62 fs pulse generation,” Opt. Lett. 38(19), 3842–3845 (2013). [CrossRef]   [PubMed]  

10. A. Schmidt, S. Rivier, G. Steinmeyer, J. H. Yim, W. B. Cho, S. Lee, F. Rotermund, M. C. Pujol, X. Mateos, M. Aguiló, F. Díaz, V. Petrov, and U. Griebner, “Passive mode locking of Yb:KLuW using a single-walled carbon nanotube saturable absorber,” Opt. Lett. 33(7), 729–731 (2008). [CrossRef]   [PubMed]  

11. H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011). [CrossRef]  

12. Z. Q. Luo, M. Zhou, J. Weng, G. Huang, H. Y. Xu, C. C. Ye, and Z. P. Cai, “Graphene-based passively Q-switched dual-wavelength erbium-doped fiber laser,” Opt. Lett. 35(21), 3709–3711 (2010). [CrossRef]   [PubMed]  

13. W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010). [CrossRef]  

14. Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011). [CrossRef]   [PubMed]  

15. Z. Luo, Y. Huang, J. Weng, H. Cheng, Z. Lin, B. Xu, Z. Cai, and H. Xu, “1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber,” Opt. Express 21(24), 29516–29522 (2013). [CrossRef]   [PubMed]  

16. C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012). [CrossRef]   [PubMed]  

17. C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012). [CrossRef]  

18. S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014). [CrossRef]   [PubMed]  

19. B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014). [CrossRef]  

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23. H. Liu, A. P. Luo, F. Z. Wang, R. Tang, M. Liu, Z. C. Luo, W. C. Xu, C. J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39(15), 4591–4594 (2014). [CrossRef]   [PubMed]  

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25. R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997). [CrossRef]  

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References

  • View by:

  1. J. H. Liu, B. Ozygus, S. H. Yang, J. Erhard, U. Seelig, A. Ding, H. Weber, X. L. Meng, L. Zhu, L. Qin, C. L. Du, X. G. Xu, and Z. S. Shao, “Efficient passive Q-switching operation of a diode-pumped Nd:GdVO4 laser with a Cr4+:YAG saturable absorber,” J. Opt. Soc. Am. B 20(4), 652–661 (2003).
    [Crossref]
  2. Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994).
    [Crossref]
  3. Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995).
    [Crossref]
  4. K. V. Yumashev, N. N. Posnov, I. A. Denisov, V. P. Mikhailov, and R. Moncorgé, “Nonlinear spectroscopy and passive Q-switching operation of Cr4+-doped SrGd4(SiO4)3O and CaGd4(SiO4)3O crystals,” J. Opt. Soc. Am. B 15(6), 1707–1713 (1998).
    [Crossref]
  5. H. H. Yu, V. Petrov, U. Griebner, D. Parisi, S. Veronesi, and M. Tonelli, “Compact passively Q-switched diode-pumped Tm:LiLuF4 laser with 1.26 mJ output energy,” Opt. Lett. 37(13), 2544–2546 (2012).
    [Crossref] [PubMed]
  6. A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
    [Crossref]
  7. A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
    [Crossref]
  8. K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
    [Crossref]
  9. A. Diebold, F. Emaury, C. Schriber, M. Golling, C. J. Saraceno, T. Südmeyer, and U. Keller, “SESAM mode-locked Yb:CaGdAlO4 thin disk laser with 62 fs pulse generation,” Opt. Lett. 38(19), 3842–3845 (2013).
    [Crossref] [PubMed]
  10. A. Schmidt, S. Rivier, G. Steinmeyer, J. H. Yim, W. B. Cho, S. Lee, F. Rotermund, M. C. Pujol, X. Mateos, M. Aguiló, F. Díaz, V. Petrov, and U. Griebner, “Passive mode locking of Yb:KLuW using a single-walled carbon nanotube saturable absorber,” Opt. Lett. 33(7), 729–731 (2008).
    [Crossref] [PubMed]
  11. H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
    [Crossref]
  12. Z. Q. Luo, M. Zhou, J. Weng, G. Huang, H. Y. Xu, C. C. Ye, and Z. P. Cai, “Graphene-based passively Q-switched dual-wavelength erbium-doped fiber laser,” Opt. Lett. 35(21), 3709–3711 (2010).
    [Crossref] [PubMed]
  13. W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
    [Crossref]
  14. Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
    [Crossref] [PubMed]
  15. Z. Luo, Y. Huang, J. Weng, H. Cheng, Z. Lin, B. Xu, Z. Cai, and H. Xu, “1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber,” Opt. Express 21(24), 29516–29522 (2013).
    [Crossref] [PubMed]
  16. C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
    [Crossref] [PubMed]
  17. C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
    [Crossref]
  18. S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
    [Crossref] [PubMed]
  19. B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
    [Crossref]
  20. K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
    [Crossref] [PubMed]
  21. H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
    [Crossref] [PubMed]
  22. R. I. Woodward, E. J. Kelleher, T. Runcorn, S. V. Popov, F. Torrisi, R. T. Howe and T. Hasan, “Q-switched fiber laser with MoS2 saturable absorber”, in CLEO: Science and Innovations (Optical Society of America), SM3H, 2014.
  23. H. Liu, A. P. Luo, F. Z. Wang, R. Tang, M. Liu, Z. C. Luo, W. C. Xu, C. J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39(15), 4591–4594 (2014).
    [Crossref] [PubMed]
  24. Y. Huang, Z. Q. Luo, Y. Y. Li, M. Zhong, B. Xu, K. J. Che, H. Y. Xu, Z. P. Cai, J. Peng, and J. Weng, “Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber,” Opt. Express 22(21), 25258–25266 (2014).
    [Crossref]
  25. R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
    [Crossref]
  26. H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
    [Crossref]
  27. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
    [Crossref] [PubMed]
  28. J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
    [Crossref] [PubMed]

2014 (6)

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
[Crossref] [PubMed]

H. Liu, A. P. Luo, F. Z. Wang, R. Tang, M. Liu, Z. C. Luo, W. C. Xu, C. J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39(15), 4591–4594 (2014).
[Crossref] [PubMed]

Y. Huang, Z. Q. Luo, Y. Y. Li, M. Zhong, B. Xu, K. J. Che, H. Y. Xu, Z. P. Cai, J. Peng, and J. Weng, “Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber,” Opt. Express 22(21), 25258–25266 (2014).
[Crossref]

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

2013 (3)

2012 (4)

H. H. Yu, V. Petrov, U. Griebner, D. Parisi, S. Veronesi, and M. Tonelli, “Compact passively Q-switched diode-pumped Tm:LiLuF4 laser with 1.26 mJ output energy,” Opt. Lett. 37(13), 2544–2546 (2012).
[Crossref] [PubMed]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

2011 (3)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
[Crossref]

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
[Crossref] [PubMed]

2010 (2)

Z. Q. Luo, M. Zhou, J. Weng, G. Huang, H. Y. Xu, C. C. Ye, and Z. P. Cai, “Graphene-based passively Q-switched dual-wavelength erbium-doped fiber laser,” Opt. Lett. 35(21), 3709–3711 (2010).
[Crossref] [PubMed]

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
[Crossref]

2008 (1)

2003 (1)

2002 (1)

K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
[Crossref]

2001 (2)

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

1998 (1)

1997 (1)

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

1995 (1)

Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995).
[Crossref]

1994 (1)

Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994).
[Crossref]

Agnesi, A.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

Aguiló, M.

Baillargeat, D.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Bimbaum, M.

Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995).
[Crossref]

Birnbaum, M.

Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994).
[Crossref]

Blau, W. J.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Cai, Z.

Cai, Z. P.

Chambon, B.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Che, K. J.

Chen, H. R.

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
[Crossref] [PubMed]

Chen, Y.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

Cheng, H.

Cho, W. B.

Coleman, J. N.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Demchuk, M. I.

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

Denisov, I. A.

K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
[Crossref]

K. V. Yumashev, N. N. Posnov, I. A. Denisov, V. P. Mikhailov, and R. Moncorgé, “Nonlinear spectroscopy and passive Q-switching operation of Cr4+-doped SrGd4(SiO4)3O and CaGd4(SiO4)3O crystals,” J. Opt. Soc. Am. B 15(6), 1707–1713 (1998).
[Crossref]

Descroix, E.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Díaz, F.

Diebold, A.

Ding, A.

Doury, J.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Du, C. L.

Du, J.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
[Crossref] [PubMed]

Edwin, T. H. T.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Emaury, F.

Erhard, J.

Fan, J.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Farge, P.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Feng, Y.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Fox, D.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Gamier, N.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Girard, S.

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

Golling, M.

Griebner, U.

Guandalini, A.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

Guillet, H.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Hsieh, W. F.

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
[Crossref] [PubMed]

Huang, G.

Huang, M. F.

Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995).
[Crossref]

Huang, Y.

Jabczynski, J. K.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

Jiang, B.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Jiang, G. B.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

Keller, U.

Kis, A.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6(3), 147–150 (2011).
[Crossref] [PubMed]

Knize, R. J.

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
[Crossref]

Kopczynski, K.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

Kuleshov, N. V.

K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
[Crossref]

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

Kuo, Y. K.

Y. K. Kuo, M. F. Huang, and M. Bimbaum, “Tunable Cr4+:YSO Q-switched Cr:LiCAF laser,” IEEE Journal of Quan. Elec. 31(4), 657–663 (1995).
[Crossref]

Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994).
[Crossref]

Laporte, P.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
[Crossref]

Lee, S.

Levchenko, V. I.

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

Li, H.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Li, L. J.

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
[Crossref]

Li, Y. Y.

Lin, Z.

Liu, H.

Liu, J.

H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
[Crossref]

Liu, J. H.

Liu, M.

Loh, K. P.

Lotya, M.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Lu, S.

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S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
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Mierczyk, Z.

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Moncorgé, R.

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K. V. Yumashev, N. N. Posnov, I. A. Denisov, V. P. Mikhailov, and R. Moncorgé, “Nonlinear spectroscopy and passive Q-switching operation of Cr4+-doped SrGd4(SiO4)3O and CaGd4(SiO4)3O crystals,” J. Opt. Soc. Am. B 15(6), 1707–1713 (1998).
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K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
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H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
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Parisi, D.

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R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
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A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
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K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
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Pujol, M. C.

Qi, X.

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
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H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
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Radenovic, A.

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Reali, G.

A. Agnesi, A. Guandalini, G. Reali, J. K. Jabczynski, K. Kopczynski, and Z. Mierczyk, “Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber,” Opt. Commun. 194(4-6), 429–433 (2001).
[Crossref]

Rivier, S.

Rivoire, J.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
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Roy, S.

R. Moncorgé, B. Chambon, J. Rivoire, N. Gamier, E. Descroix, P. Laporte, H. Guillet, S. Roy, J. Mareschal, D. Pelenc, J. Doury, and P. Farge, “Nd doped crystals for medical laser applications,” Opt. Mater. 8(1-2), 109–119 (1997).
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Schmidt, A.

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Seelig, U.

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A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
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Su, C. Y.

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
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Tan, W. D.

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
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Tang, D. Y.

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
[Crossref] [PubMed]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
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W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
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Tang, J.

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
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Tay, B. K.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
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S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
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Wang, B.

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
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Wang, F. Z.

Wang, J.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

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K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
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Wang, Q.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

Wang, S.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

Wang, Y. G.

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
[Crossref] [PubMed]

H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
[Crossref]

Wang, Z. T.

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

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Wen, S.

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

Wen, S. C.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

Wen, X. M.

Y. G. Wang, H. R. Chen, X. M. Wen, W. F. Hsieh, and J. Tang, “A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers,” Nanotechnology 22(45), 455203 (2011).
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Weng, J.

Xiang, Y. J.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

Xie, G. Q.

W. D. Tan, C. Y. Su, R. J. Knize, G. Q. Xie, L. J. Li, and D. Y. Tang, “Mode locking of ceramic Nd:yttrium aluminum garnet with graphene as a saturable absorber,” Appl. Phys. Lett. 96(3), 031106 (2010).
[Crossref]

Xu, B.

Xu, C. W.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

Xu, H.

Xu, H. Y.

Xu, W. C.

Xu, X. G.

Yakimovitch, V. N.

A. V. Podlipenski, V. G. Shcherbitsky, M. I. Demchuk, N. V. Kuleshov, V. I. Levchenko, V. N. Yakimovitch, S. Girard, and R. Moncorgé, “Cr2+:Cd0.05Mn0.45Te crystal as a new saturable absorber for 2 µm lasers,” Opt. Commun. 192(1-2), 65–68 (2001).
[Crossref]

Yang, S. H.

Yang, Y.

Y. K. Kuo, Y. Yang, and M. Birnbaum, “Cr4+:Gd3Sc2Ga3O12 passive Q switch for the Cr3+:LiCaAlF6 laser,” Appl. Phys. Lett. 64(18), 2329–2331 (1994).
[Crossref]

Yap, C. C. R.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Ye, C. C.

Yim, J. H.

Yu, H.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

Yu, H. H.

Yumashev, K. V.

K. V. Yumashev, I. A. Denisov, N. N. Popov, N. V. Kuleshov, and R. Moncorgé, “Excited state absorption and passive Q-switch performance of Co2+ doped oxide crystals,” J. Alloy. Comp. 341(1-2), 366–370 (2002).
[Crossref]

K. V. Yumashev, N. N. Posnov, I. A. Denisov, V. P. Mikhailov, and R. Moncorgé, “Nonlinear spectroscopy and passive Q-switching operation of Cr4+-doped SrGd4(SiO4)3O and CaGd4(SiO4)3O crystals,” J. Opt. Soc. Am. B 15(6), 1707–1713 (1998).
[Crossref]

Zhang, H.

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

H. Zhang, S. B. Lu, J. Zheng, J. Du, S. C. Wen, D. Y. Tang, and K. P. Loh, “Molybdenum disulfide (MoS₂) as a broadband saturable absorber for ultra-fast photonics,” Opt. Express 22(6), 7249–7260 (2014).
[Crossref] [PubMed]

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

H. Liu, A. P. Luo, F. Z. Wang, R. Tang, M. Liu, Z. C. Luo, W. C. Xu, C. J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39(15), 4591–4594 (2014).
[Crossref] [PubMed]

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

Zhang, H. B.

H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
[Crossref]

Zhang, L.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zhang, Q.

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Zhang, X.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zhao, C. J.

J. Du, Q. Wang, G. B. Jiang, C. W. Xu, C. J. Zhao, Y. J. Xiang, Y. Chen, S. C. Wen, and H. Zhang, “Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction,” Sci Rep 4, 6346 (2014).
[Crossref] [PubMed]

H. Liu, A. P. Luo, F. Z. Wang, R. Tang, M. Liu, Z. C. Luo, W. C. Xu, C. J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39(15), 4591–4594 (2014).
[Crossref] [PubMed]

C. J. Zhao, H. Zhang, X. Qi, Y. Chen, Z. T. Wang, S. C. Wen, and D. Y. Tang, “Ultra-short pulse generation by a topological insulator based saturable absorber,” Appl. Phys. Lett. 101(21), 211106 (2012).
[Crossref]

C. J. Zhao, Y. H. Zou, Y. Chen, Z. T. Wang, S. Lu, H. Zhang, S. C. Wen, and D. Y. Tang, “Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker,” Opt. Express 20(25), 27888–27895 (2012).
[Crossref] [PubMed]

Zhao, H. C.

B. Wang, H. Yu, H. C. Zhao, S. Wen, H. Zhang, and J. Wang, “Topological Insulator Simultaneously Q-Switched Dual-Wavelength Nd:Lu2O3 Laser,” IEEE Photonics Journal 6(3), 1501007 (2014).
[Crossref]

Zhao, M.

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
[Crossref] [PubMed]

Zhao, Q.

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Zheng, J.

Zhong, M.

Zhou, M.

Zhu, L.

Zhuo, Z.

H. B. Qin, Z. Zhuo, J. Liu, H. B. Zhang, and Y. G. Wang, “Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a Carbon Nanotube Saturable Absorber,” Laser Phys. 21(9), 1562–1565 (2011).
[Crossref]

Zou, Y. H.

ACS Nano (1)

K. Wang, J. Wang, J. Fan, M. Lotya, A. O’Neill, D. Fox, Y. Feng, X. Zhang, B. Jiang, Q. Zhao, H. Zhang, J. N. Coleman, L. Zhang, and W. J. Blau, “Ultrafast saturable absorption of two-dimensional MoS2 nanosheets,” ACS Nano 7(10), 9260–9267 (2013).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From bulk to monolayer MoS2: Evolution of Raman scattering,” Adv. Funct. Mater. 22(7), 1385–1390 (2012).
[Crossref]

Adv. Mater. (1)

S. Wang, H. Yu, H. Zhang, A. Wang, M. Zhao, Y. Chen, L. Mei, and J. Wang, “Broadband Few-Layer MoS2 Saturable Absorbers,” Adv. Mater. 26(21), 3538–3544 (2014).
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Appl. Phys. Lett. (3)

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Figures (4)

Fig. 1
Fig. 1 (a) XRD and (b) Raman spectra of the bulk MoS2 and few-layer MoS2 samples; (c) AFM image and (d) height profile of an as-prepared few-layer MoS2 sample.
Fig. 2
Fig. 2 Transmission spectra of the blank BK7 and MoS2-transferred BK7 glass substrates.
Fig. 3
Fig. 3 Schematic experimental set-up of the Q-switched Nd:YAP laser
Fig. 4
Fig. 4 (a) Absorbed pump power versus output power for the Q-switching regime; (b) Single pulse profile of the Q-switched Nd:YAP laser. The inset shows the pulse train; (c) Evolutions of the pulse repetition rate and the pulse width with the absorbed pump power; (d) Evolution of the pulse peak power and the pulse energy with the absorbed pump power.

Tables (1)

Tables Icon

Table 1 Comparison between the laser results obtained by passively Q-switching various 1µm Nd-based SSLs with MoS2 and other nanosheets SAs.

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