Abstract

In the present work, antireflective sub-wavelength structures have been fabricated on fluorescent 6H-SiC to enhance the white light extraction efficiency by using the reactive-ion etching method. Broadband and omnidirectional antireflection characteristics show that 6H-SiC with antireflective sub-wavelength structures suppress the average surface reflection significantly from 20.5 % to 1.01 % over a wide spectral range of 390-784 nm. The luminescence intensity of the fluorescent 6H-SiC could be enhanced in the whole emission angle range. It maintains an enhancement larger than 91 % up to the incident angle of 70 degrees, while the largest enhancement of 115.4 % could be obtained at 16 degrees. The antireflective sub-wavelength structures on fluorescent 6H-SiC could also preserve the luminescence spectral profile at a large emission angle by eliminating the Fabry-Pérot microcavity interference effect.

© 2012 Optical Society of America

1. Introduction

White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving and environment friendly light sources [15]. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter material much superior to the phosphors in terms of high color rendering index (CRI) value and long lifetime [6, 7]. The donor-acceptor-pair (DAP) band luminescences from the nitrogen (N)-boron (B) doped 6H-SiC present a warm-white color. Combined with the DAP luminescences from the nitrogen-aluminium doped 6H-SiC, pure white light with CRI larger than 90 could be produced [8, 9]. Furthermore, SiC is a well-established substrate material for nitride growth and has an excellent thermal conductivity.

The light extraction efficiency of the SiC-based LED is usually low due to the internal re-flection loss arising from the large refractive index difference between the SiC and air interfaces. Antireflective sub-wavelength structures (ARS) have been proved as an ideal approach to enhance the light transmittance over a broad spectral bandwidth [1013]. Applying the ARS on SiC has been studied on the monochromatic LEDs with undoped SiC as substrate materials [14, 15] and on the 4H-SiC photodiodes [16]. In the present work, the effect of ARS on the fluorescent SiC to enhance the light extraction efficiency over the entire visible spectral range has been studied.

2. Experiments

Homoepitaxial layers of 6H-SiC with N and B dopants were grown by the Fast Sublimation Growth Process [17]. The growth process is driven by a temperature gradient created between the source, in a form of polycrystalline SiC plate, and the substrate. Boron was introduced into the epilayers by doping from the source and nitrogen incorporation was controlled by adjusting the N2 gas pressure during the growth. The 6H-SiC epilayers were grown on 6H-SiC (0001) substrates with 1.4 degree off-orientation in the [112̅0] direction at growth temperature of 1725°C.

Here we present an approach to fabricate the periodic cone-shaped ARS on the N-B doped 6H-SiC by using the reactive-ion etching (RIE), and the fabrication process is illustrated in Fig. 1. Firstly, the positive e-beam resist (ZEP520) was spin-coated on the SiC sample (Fig. 1(a)) and then pre-baked on a hot plate at 160°C for 2 minutes (Fig. 1(b)). By using the e-beam lithography (JEOL JBX9300FS) with a subsequent development process, the designed pattern was transferred to the e-beam resist coating (Fig. 1(c)). A hard mask material (chromium) layer was then deposited on the patterned SiC by the e-beam evaporation (Fig. 1(d)). Followed by a lift-off process, the dot-shaped pattern of chromium was obtained as a hard mask layer (Fig. 1(e)). The dry etching process using SF6 and O2 precursors was carried out in the RIE system. During the etch process, the radio frequency power (100 W), process pressure (30 mT), and gas flow rates (20 sccm SF6, 5 sccm O2) of the RIE were carefully chosen. After 12 minutes etching, the cone-shaped ARS with designed configuration (bottom diameter of 240 nm, pitch of 340 nm, height of 1.2 μm, and hexagonal arrangement) were finally formed on the SiC surface (Fig. 1(f)). An oblique-view scanning electron microscope (SEM) figure of the SiC sample with ARS array is shown in Fig. 2(a).

 figure: Fig. 1

Fig. 1 Schematic illustrations of the SiC ARS fabrication process steps (a)–(f).

Download Full Size | PPT Slide | PDF

 figure: Fig. 2

Fig. 2 (a) An oblique-view SEM figure of the SiC sample with ARS, and (b) reflectance spectra of the SiC samples with and without ARS (measured at 6 deg.).

Download Full Size | PPT Slide | PDF

3. Characterization and results

The surface reflectance of the bare and ARS SiC samples were measured by a goniometer system at a measured angle of 6 degrees (deg.), where 0 deg. is the direction normal to the sample surface. The reflectance spectra were measured from 390 to 785 nm which covers the entire visible spectral range (typically from 390 to 750 nm) and the results are shown in Fig. 2(b). It is seen that the surface reflection is effectively suppressed by applying the SiC ARS. The average reflectance over the measured spectral range decreased from 20.5 % to 1.01 % and the minimum reflectance close to 0 was observed at around 400 nm for the ARS SiC sample. Although the reflectance starts to increase at above 680 nm, the reflectance over the entire visible spectral range is below 2 %. This result suggests that the SiC ARS is an effective way to suppress the surface reflection for the fluorescent SiC sample in the whole visible spectral range.

The angle-resolved room temperature photoluminescence spectra of the SiC samples with and without the ARS were also acquired by the same goniometer system. A 377 nm diode laser was used as the excitation source which was normal to the sample surface and the detected emission angle varied from 16 to 80 degrees. The broad DAP band luminescence of the N-B doped fluorescent SiC has a peak wavelength at round 578 nm and a full width at half maximum of 110 nm which is a merit as wavelength converter material. From Fig. 3(a), it is seen that the luminescence intensity of the bare SiC decreases together with a blue shift of the peak wavelength as the emission angle increases from 20 to 70 deg., which could be attributed to the Fabry-Pérot microcavity interference effect explained in the Ref. [7, 18, 19]. In Fig. 3(b), although the luminescence intensity of the ARS SiC also decreases with larger emission angle, the peak wavelength remains the same which is due to the elimination of the Fabry-Pérot microcavity interference effect by introducing the ARS on the SiC surface.

 figure: Fig. 3

Fig. 3 Angle-resolved photoluminescence spectra from 20, 30, 40, 50, 60, to 70 deg. for the SiC samples (a) without and (b) with ARS; (c) integrated luminescence intensities and the (d) luminescence enhancement of the two SiC samples.

Download Full Size | PPT Slide | PDF

The integral luminescence intensities of the two samples at different emission angle are compared in Fig. 3(c). In both samples, the luminescence intensity at a large emission angle of 60 deg. is still higher than 52 % of the one at 16 deg., which is quite promising among the most commercial LEDs (less than 30 %). The angle-resolved luminescence enhancement of the ARS SiC is also shown in Fig. 3(d). It is seen that the luminescence intensity is enhanced by larger than 91 % from 16 to 70 deg., and the highest enhancement of 115.4 % is obtained at 16 deg. of the emission angle. Although the enhancement starts to decrease dramatically from 70 deg., the luminescence intensity of the SiC is significantly enhanced in a very large emission angle range.

4. Conclusion

A method by using reactive-ion etching is demonstrated to fabricate the ARS array on fluo-rescent SiC. The surface reflectance over the whole visible spectral range is dramatically suppressed from 20.5 % to 1.01 % by applying the ARS on the SiC sample. From the angle-resolved photoluminescence measurements, it is also found that the luminescence intensity could be enhanced by more than 91 % in a very large emission angle range (up to 70 degrees). In addition, the Fabry-Pérot microcavity interference effect could be eliminated to preserve the luminescence spectral profile by introducing the ARS on fluorescent SiC. As a result, broadband and omnidirectional ARS could effectively enhance the light extraction efficiency of the fluorescent SiC, and further improve the external quantum efficiency of the SiC-based white LEDs.

Acknowledgments

This work was supported by the Danish councils for strategic research funding (no. 09-072118), Swedish Energy Agency, Nordic Energy Research, Swedish Research Council (no. 2009-5307), Department of the New Energy and Industrial Technology Development Organization.

References and links

1. C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010). [CrossRef]  

2. C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010). [CrossRef]  

3. R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005). [CrossRef]  

4. H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express 19, A930–A936 (2011). [CrossRef]   [PubMed]  

5. H. Menkara, R. A. Gilstrap Jr., T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express 19, A972–A981 (2011). [CrossRef]   [PubMed]  

6. S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006). [CrossRef]  

7. Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011). [CrossRef]  

8. S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011). [CrossRef]  

9. Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express 19, A166–A172 (2011). [CrossRef]   [PubMed]  

10. Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009). [CrossRef]  

11. L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011). [CrossRef]  

12. N. Yamada, T. Ijiro, E. Okamoto, K. Hayashi, and H. Masuda, “Characterization of antireflection moth-eye film on crystalline silicon photovoltaic module,” Opt. Express 19, A118–A125 (2011). [CrossRef]   [PubMed]  

13. J. W. Leem, Y. M. Song, and J. S. Yu, “Broadband wide-angle antireflection enhancement in AZO/Si shell/core subwavelength grating structures with hydrophobic surface for Si-based solar cells,” Opt. Express 19, A1155–A1164 (2011). [CrossRef]   [PubMed]  

14. T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009). [CrossRef]  

15. R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010). [CrossRef]  

16. M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011). [CrossRef]   [PubMed]  

17. M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia - the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011). [CrossRef]  

18. D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002). [CrossRef]  

19. S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007). [CrossRef]  

References

  • View by:
  • |
  • |
  • |

  1. C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
    [Crossref]
  2. C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
    [Crossref]
  3. R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
    [Crossref]
  4. H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express 19, A930–A936 (2011).
    [Crossref] [PubMed]
  5. H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express 19, A972–A981 (2011).
    [Crossref] [PubMed]
  6. S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
    [Crossref]
  7. Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
    [Crossref]
  8. S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
    [Crossref]
  9. Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express 19, A166–A172 (2011).
    [Crossref] [PubMed]
  10. Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
    [Crossref]
  11. L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
    [Crossref]
  12. N. Yamada, T. Ijiro, E. Okamoto, K. Hayashi, and H. Masuda, “Characterization of antireflection moth-eye film on crystalline silicon photovoltaic module,” Opt. Express 19, A118–A125 (2011).
    [Crossref] [PubMed]
  13. J. W. Leem, Y. M. Song, and J. S. Yu, “Broadband wide-angle antireflection enhancement in AZO/Si shell/core subwavelength grating structures with hydrophobic surface for Si-based solar cells,” Opt. Express 19, A1155–A1164 (2011).
    [Crossref] [PubMed]
  14. T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
    [Crossref]
  15. R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
    [Crossref]
  16. M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
    [Crossref] [PubMed]
  17. M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia - the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
    [Crossref]
  18. D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
    [Crossref]
  19. S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
    [Crossref]

2011 (9)

H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express 19, A930–A936 (2011).
[Crossref] [PubMed]

H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express 19, A972–A981 (2011).
[Crossref] [PubMed]

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
[Crossref]

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

Y. Ou, D. Corell, C. Dam-Hansen, P. Petersen, and H. Ou, “Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode,” Opt. Express 19, A166–A172 (2011).
[Crossref] [PubMed]

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

N. Yamada, T. Ijiro, E. Okamoto, K. Hayashi, and H. Masuda, “Characterization of antireflection moth-eye film on crystalline silicon photovoltaic module,” Opt. Express 19, A118–A125 (2011).
[Crossref] [PubMed]

J. W. Leem, Y. M. Song, and J. S. Yu, “Broadband wide-angle antireflection enhancement in AZO/Si shell/core subwavelength grating structures with hydrophobic surface for Si-based solar cells,” Opt. Express 19, A1155–A1164 (2011).
[Crossref] [PubMed]

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

2010 (3)

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

2009 (2)

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

2007 (1)

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

2006 (1)

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

2005 (1)

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

2002 (1)

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Abbott, S.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Akasaki, I.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Allsopp, D. W. E.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Amano, H.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Aura, S.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Bahng, W.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Berg, R. W.

Bergman, J. P.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Besson, P.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Chang, C.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Chang, S.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Chen, C.

H. Kuo, C. Hung, H. Chen, K. Chen, C. Wang, C. Sher, C. Yeh, C. Lin, C. Chen, and Y. Cheng, “Patterned structure of remote phosphor for phosphor-converted white LEDs,” Opt. Express 19, A930–A936 (2011).
[Crossref] [PubMed]

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Chen, H.

Chen, K.

Chen, M.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Chen, Q.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Cheng, Y.

Chi, Y.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Chichibu, S. F.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Corell, D.

Dam-Hansen, C.

Delamadeleine, E.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Dong, X.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

Feng, H.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

Franssila, S.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Furusho, T.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Gilstrap, R. A.

Hadji, E.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Hayashi, K.

Henry, A.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Höppe, H. A.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Hou, Q.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

Hubbard, G.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Hung, C.

Hung, J.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Ijiro, T.

Ivanov, I. G.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Iwaya, M.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Jokinen, V.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Jokubavicius, V.

Joo, S.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Juestel, T.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Kamiyama, S.

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
[Crossref]

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Kaneko, Y.

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Kang, M.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Kawai, R.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Kim, N.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Kimoto, T.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Kinoshita, H.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Kitano, T.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Kondo, T.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Koo, S.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Krames, M. R.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Kuo, H.

Lee, J.

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Leem, J. W.

Li, A.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Li, G. H.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

Li, K.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

Lin, C.

Linnarsson, M.

Liu, C.

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
[Crossref]

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Mabuchi, S.

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Maeda, T.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Magnea, N.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Masuda, H.

Menkara, H.

Minkara, M.

Monemar, B.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Moriceau, H.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Morris, T.

Mueller, G.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Mueller-Mach, R.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Nakamura, Y.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Okamoto, E.

Onuma, T.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Ou, H.

Ou, Y.

Pan, S. S.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

Petersen, P.

Renard, P.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Sainiemi, L.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Sakurai, H.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Schmidt, P.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Schnick, W.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Seko, T.

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Shah, A.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Shen, C.

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

Sher, C.

Shields, P. A.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Shpak, M.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Song, Y. M.

Sotta, D.

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

Stadler, F.

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Su, K.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Suda, J.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Summers, C. J.

Suvanto, P.

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Suzuki, A.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Syväjärvi, M.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
[Crossref]

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia - the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[Crossref]

Takeuchi, T.

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

Tamura, K.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Teng, X. M.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

Teramae, F.

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Wagner, B. K.

Wang, C.

Wang, W. N.

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

Wu, C.

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Yakimova, R.

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1, 1439–1446 (2011).
[Crossref]

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia - the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[Crossref]

Yamada, N.

Ye, C.

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

Yeh, C.

Yoshi-moto, M.

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

Yu, J. S.

Adv. Mater. (1)

L. Sainiemi, V. Jokinen, A. Shah, M. Shpak, S. Aura, P. Suvanto, and S. Franssila, “Non-reflcecting silicon and polymer surfaces by plasma etching and replication,” Adv. Mater. 23, 122–126 (2011).
[Crossref]

Appl. Phys. Lett. (1)

Q. Chen, G. Hubbard, P. A. Shields, C. Liu, D. W. E. Allsopp, W. N. Wang, and S. Abbott, “Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting,” Appl. Phys. Lett. 94, 263118 (2009).
[Crossref]

IEEE Photon. Technol. Lett. (1)

C. Shen, K. Li, Q. Hou, H. Feng, and X. Dong, “White LED based on YAG: Ce, Gd phosphor and CdSe-ZnS core/shell quantum dots,” IEEE Photon. Technol. Lett. 22, 884–886 (2010).
[Crossref]

J. Appl. Phys. (2)

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshi-moto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC,” J. Appl. Phys. 99, 093108 (2006).
[Crossref]

D. Sotta, E. Hadji, N. Magnea, E. Delamadeleine, P. Besson, P. Renard, and H. Moriceau, “Resonant optical microcavity based on crystalline silicon active layer,” J. Appl. Phys. 92, 2207–2209 (2002).
[Crossref]

J. Phys. D: Appl. Phys. (1)

S. S. Pan, C. Ye, X. M. Teng, and G. H. Li, “Angle-dependent photoluminescence of [110]-oriented nitrogen-doped SnO2 films,” J. Phys. D: Appl. Phys. 40, 4771–4774 (2007).
[Crossref]

J. Semicond. (1)

S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syväjärvi, and R. Yakimova, “Fluorescent SiC and its application to white light-emitting diodes,” J. Semicond. 32, 013004 (2011).
[Crossref]

Nanoscale Res. Lett. (1)

M. Kang, S. Joo, W. Bahng, J. Lee, N. Kim, and S. Koo, “Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes,” Nanoscale Res. Lett. 6, 236 (2011).
[Crossref] [PubMed]

Opt. Express (5)

Opt. Mater. Express (1)

Org. Electron. (1)

C. Chang, C. Chen, C. Wu, S. Chang, J. Hung, and Y. Chi, “High-color-rendering pure-white phosphorescent organic light-emitting devices employing only two complementary colors,” Org. Electron. 11, 266–272 (2010).
[Crossref]

Phys. Status Solidi A (1)

R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Höppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly efficient all-nitride phosphor-converted white light emitting diode,” Phys. Status Solidi A 202, 1727–1732 (2005).
[Crossref]

Phys. Status Solidi C (1)

R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su, “Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode,” Phys. Status Solidi C 7, 2180–2182 (2010).
[Crossref]

Proc. SPIE (1)

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, “Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-lightemitting diode on SiC substrate,” Proc. SPIE 7216, 721628 (2009).
[Crossref]

Other (1)

M. Syväjärvi and R. Yakimova, “Sublimation epitaxial growth of hexagonal and cubic SiC,” in Encyclopedia - the Comprehensive Semiconductor Science and Technology, P. Bhattacharya, R. Fornari, and H. Kamimura, eds. (Elsevier, 2011).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1
Fig. 1 Schematic illustrations of the SiC ARS fabrication process steps (a)–(f).
Fig. 2
Fig. 2 (a) An oblique-view SEM figure of the SiC sample with ARS, and (b) reflectance spectra of the SiC samples with and without ARS (measured at 6 deg.).
Fig. 3
Fig. 3 Angle-resolved photoluminescence spectra from 20, 30, 40, 50, 60, to 70 deg. for the SiC samples (a) without and (b) with ARS; (c) integrated luminescence intensities and the (d) luminescence enhancement of the two SiC samples.

Metrics